Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon

Defect centers generated in crystalline silicon by MeV Si implants have been investigated by a combination of photoluminescence, variable-energy positron annihilation measurements, depth profiling by etching, annealing studies, and the dependence on impurities. The broad 935 meV photoluminescence band occurs at intrinsic interstitial complexes, the 835 meV band at small vacancy clusters, and the 1062 meV line at a low concentration of vacancy clusters which are possibly formed by aggregation of the 835 meV centers.