Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon

R. Harding, G. Davies*, J. Tan, P. G. Coleman, C. P. Burrows, J. Wong-Leung

*Corresponding author for this work

    Research output: Contribution to journal › Article › peer-review

    6 Citations (Scopus)

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    Material Science