Identification of nanoindentation-induced phase changes in silicon by in situ electrical characterization

S. Ruffell*, J. E. Bradby, N. Fujisawa, J. S. Williams

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    52 Citations (Scopus)


    In situ electrical measurements during nanoindentation of Czochralski grown p -type crystalline silicon (100) have been performed using a conducting diamond Berkovich indenter tip. Through-tip current monitoring with a sensitivity of ∼10 pA and extraction of current-voltage curves at various points on the complete load-unload cycle have been used to track the phase transformations of silicon during the loading and unloading cycle. Postindent current-voltage curves prove to be extremely sensitive to phase changes during indentation, as well as to the final phase composition within the indented volume. For example, differences in the final structure are detected by current-voltage measurements even in an unloading regime in which only amorphous silicon is expected to form. The electrical measurements are interpreted with the aid of previously reported transmission electron microscopy and Raman microspectroscopy measurements.

    Original languageEnglish
    Article number083531
    JournalJournal of Applied Physics
    Issue number8
    Publication statusPublished - 2007


    Dive into the research topics of 'Identification of nanoindentation-induced phase changes in silicon by in situ electrical characterization'. Together they form a unique fingerprint.

    Cite this