TY - GEN
T1 - III-V compound semiconductor nanowires
AU - Paiman, S.
AU - Joyce, H. J.
AU - Kang, J. H.
AU - Gao, Q.
AU - Tan, H. H.
AU - Kim, Y.
AU - Zhang, X.
AU - Zou, J.
AU - Jagadish, C.
PY - 2009
Y1 - 2009
N2 - InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.
AB - InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.
UR - http://www.scopus.com/inward/record.url?scp=77951009576&partnerID=8YFLogxK
M3 - Conference contribution
SN - 9789810836948
T3 - 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
SP - 155
EP - 156
BT - 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
T2 - 2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
Y2 - 26 July 2009 through 30 July 2009
ER -