III-V compound semiconductor nanowires

H. J. Joyce; S. Paiman; Q. Gao; H. H. Tan; Y. Kim; L. M. Smith; H. E. Jackson; J. M. Yarrison-Rice; X. Zhang; J. Zou; C. Jagadish

doi:10.1109/NMDC.2009.5167572

III-V compound semiconductor nanowires

H. J. Joyce, S. Paiman, Q. Gao, H. H. Tan, Y. Kim, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, X. Zhang, J. Zou, C. Jagadish^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

2 Citations (Scopus)

Abstract

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.

Original language	English
Title of host publication	2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
Pages	59-60
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2009.5167572
Publication status	Published - 2009
Event	2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 - Traverse City, MI, United States Duration: 2 Jun 2009 → 5 Jun 2009

Publication series

Name	2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

Conference

Conference	2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
Country/Territory	United States
City	Traverse City, MI
Period	2/06/09 → 5/06/09

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10.1109/NMDC.2009.5167572

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Joyce, H. J., Paiman, S., Gao, Q., Tan, H. H., Kim, Y., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Zhang, X., Zou, J., & Jagadish, C. (2009). III-V compound semiconductor nanowires. In 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 (pp. 59-60). Article 5167572 (2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009). https://doi.org/10.1109/NMDC.2009.5167572

@inproceedings{77d87e63a77443168888dfab1cb91669,

title = "III-V compound semiconductor nanowires",

abstract = "GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.",

keywords = "III-V compound semiconductors, MOCVD, Nanowires",

author = "Joyce, \{H. J.\} and S. Paiman and Q. Gao and Tan, \{H. H.\} and Y. Kim and Smith, \{L. M.\} and Jackson, \{H. E.\} and Yarrison-Rice, \{J. M.\} and X. Zhang and J. Zou and C. Jagadish",

year = "2009",

doi = "10.1109/NMDC.2009.5167572",

language = "English",

isbn = "9781424446964",

series = "2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009",

pages = "59--60",

booktitle = "2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009",

note = "2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 ; Conference date: 02-06-2009 Through 05-06-2009",

}

Joyce, HJ, Paiman, S, Gao, Q, Tan, HH, Kim, Y, Smith, LM, Jackson, HE, Yarrison-Rice, JM, Zhang, X, Zou, J & Jagadish, C 2009, III-V compound semiconductor nanowires. in 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009., 5167572, 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009, pp. 59-60, 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009, Traverse City, MI, United States, 2/06/09. https://doi.org/10.1109/NMDC.2009.5167572

TY - GEN

T1 - III-V compound semiconductor nanowires

AU - Joyce, H. J.

AU - Paiman, S.

AU - Gao, Q.

AU - Tan, H. H.

AU - Kim, Y.

AU - Smith, L. M.

AU - Jackson, H. E.

AU - Yarrison-Rice, J. M.

AU - Zhang, X.

AU - Zou, J.

AU - Jagadish, C.

PY - 2009

Y1 - 2009

N2 - GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.

AB - GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.

KW - III-V compound semiconductors

KW - MOCVD

KW - Nanowires

UR - https://www.scopus.com/pages/publications/70449627516

U2 - 10.1109/NMDC.2009.5167572

DO - 10.1109/NMDC.2009.5167572

M3 - Conference Paper

SN - 9781424446964

T3 - 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

SP - 59

EP - 60

BT - 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

T2 - 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

Y2 - 2 June 2009 through 5 June 2009

ER -

III-V compound semiconductor nanowires

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