III-V compound semiconductor nanowires for optoelectronic applications

Chennupati Jagadish

III-V compound semiconductor nanowires for optoelectronic applications

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposition, mainly focusing on their phase control, optical and structural properties and prototype optically pumped single nanowire lasers.

Original language	English
Title of host publication	Advanced Optoelectronics for Energy and Environment, AOEE 2013
Pages	JSa1A.2
Publication status	Published - 2013
Event	Advanced Optoelectronics for Energy and Environment, AOEE 2013 - Wuhan, China Duration: 25 May 2013 → 26 May 2013

Publication series

Name	Advanced Optoelectronics for Energy and Environment, AOEE 2013

Conference

Conference	Advanced Optoelectronics for Energy and Environment, AOEE 2013
Country/Territory	China
City	Wuhan
Period	25/05/13 → 26/05/13

Access to Document

Cite this

@inproceedings{a21684d6b5dc43ce97afe0d5853f6245,

title = "III-V compound semiconductor nanowires for optoelectronic applications",

abstract = "We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposition, mainly focusing on their phase control, optical and structural properties and prototype optically pumped single nanowire lasers.",

keywords = "III-V compound semiconductor, MOCVD, Nanowire",

author = "Chennupati Jagadish",

year = "2013",

language = "English",

isbn = "9781557529763",

series = "Advanced Optoelectronics for Energy and Environment, AOEE 2013",

pages = "JSa1A.2",

booktitle = "Advanced Optoelectronics for Energy and Environment, AOEE 2013",

note = "Advanced Optoelectronics for Energy and Environment, AOEE 2013 ; Conference date: 25-05-2013 Through 26-05-2013",

}

Jagadish, C 2013, III-V compound semiconductor nanowires for optoelectronic applications. in Advanced Optoelectronics for Energy and Environment, AOEE 2013. Advanced Optoelectronics for Energy and Environment, AOEE 2013, pp. JSa1A.2, Advanced Optoelectronics for Energy and Environment, AOEE 2013, Wuhan, China, 25/05/13. <https://opg.optica.org/conference.cfm?meetingid=146&yr=2013>

TY - GEN

T1 - III-V compound semiconductor nanowires for optoelectronic applications

AU - Jagadish, Chennupati

PY - 2013

Y1 - 2013

N2 - We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposition, mainly focusing on their phase control, optical and structural properties and prototype optically pumped single nanowire lasers.

AB - We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposition, mainly focusing on their phase control, optical and structural properties and prototype optically pumped single nanowire lasers.

KW - III-V compound semiconductor

KW - MOCVD

KW - Nanowire

UR - http://www.scopus.com/inward/record.url?scp=84887723669&partnerID=8YFLogxK

UR - https://doi.org/10.1364/AOEE.2013.JSa1A.2

M3 - Conference contribution

AN - SCOPUS:84887723669

SN - 9781557529763

T3 - Advanced Optoelectronics for Energy and Environment, AOEE 2013

SP - JSa1A.2

BT - Advanced Optoelectronics for Energy and Environment, AOEE 2013

T2 - Advanced Optoelectronics for Energy and Environment, AOEE 2013

Y2 - 25 May 2013 through 26 May 2013

ER -

III-V compound semiconductor nanowires for optoelectronic applications

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this