III-V compound semiconductor nanowires for optoelectronic devices

Q. Gao*, H. H. Tan, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Jin Zou, M. Johnston, C. Jagadish

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposition. Transmission and scanning electron microscopy, micro-photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and band structure.

    Original languageEnglish
    Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
    Pages1021-1022
    Number of pages2
    Publication statusPublished - 2011
    EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia
    Duration: 28 Aug 20111 Sept 2011

    Publication series

    NameOptics InfoBase Conference Papers
    ISSN (Electronic)2162-2701

    Conference

    ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
    Country/TerritoryAustralia
    CitySydney
    Period28/08/111/09/11

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