III-V nanowires for optoelectronic applications

H. H. Tan, N. Jiang, D. Saxena, Y. H. Lee, S. Mokkapati, L. Fu, Q. Gao, H. J. Joyce, C. Jagadish

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    We present an overview of our work on improving the crystal quality and carrier lifetimes of our GaAs-based nanowires. These two properties are crucial for optoelectronic device applications and which we report by showing two examples of nanowire lasers and nanowire solar cells.

    Original languageEnglish
    Title of host publicationECS Transactions
    PublisherElectrochemical Society Inc.
    Pages93-98
    Number of pages6
    Edition7
    ISBN (Electronic)9781607684527
    DOIs
    Publication statusPublished - 2013

    Publication series

    NameECS Transactions
    Number7
    Volume58
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

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