III-V nanowires on black silicon and low-temperature growth of self-catalyzed rectangular InAs NWs

We report the use of black silicon (bSi) as a growth platform for III-V nanowires (NWs), which enables low reflectance over a broad wavelength range as well as fabrication of optoelectronic devices by metalorganic vapor phase epitaxy. In addition, a new isolated growth regime is reported for self-catalyzed InAs NWs at record-low temperatures of 280 °C-365 °C, where consistently rectangular [-211]-oriented NWs are obtained. The bSi substrate is shown to support the growth of additionally GaAs and InP NWs, as well as heterostructured NWs. As seed particles, both ex-situ deposited Au nanoparticles and in-situ deposited In droplets are shown feasible. Particularly the InAs NWs with low band gap energy are used to extend low-reflectivity wavelength region into infrared, where the bSi alone remains transparent. Finally, a fabricated prototype device confirms the potential of III-V NWs combined with bSi for optoelectronic devices. Our results highlight the promise of III-V NWs on bSi for enhancing optoelectronic device performance on the low-cost Si substrates, and we believe that the new low-temperature NW growth regime advances the understanding and capabilities of NW growth.