III-V semiconductor nanowire lasers

Sudha Mokkapati; Dhruv Saxena; Nian-Jiang; Qian Gao; Hark Hoe Tan; Chennupati Jagadish

doi:10.1109/ISLC.2014.241

III-V semiconductor nanowire lasers

Sudha Mokkapati, Dhruv Saxena, Nian-Jiang, Qian Gao, Hark Hoe Tan, Chennupati Jagadish

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present results on the design of GaAs and InP nanowire lasers. We will discuss the growth of high quantum efficiency, taper free photonic nanowires for laser applications and demonstrate room-temperature lasing from these nanowires.

Original language	English
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	217-218
Number of pages	2
ISBN (Electronic)	9781479957217
DOIs	https://doi.org/10.1109/ISLC.2014.241
Publication status	Published - 16 Dec 2014
Event	2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain Duration: 7 Sept 2014 → 10 Sept 2014

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Conference

Conference	2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
Country/Territory	Spain
City	Palma de Mallorca
Period	7/09/14 → 10/09/14

Access to Document

10.1109/ISLC.2014.241

Cite this

Mokkapati, S., Saxena, D., Nian-Jiang, Gao, Q., Tan, H. H., & Jagadish, C. (2014). III-V semiconductor nanowire lasers. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 217-218). Article 6987528 (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2014.241

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title = "III-V semiconductor nanowire lasers",

abstract = "We present results on the design of GaAs and InP nanowire lasers. We will discuss the growth of high quantum efficiency, taper free photonic nanowires for laser applications and demonstrate room-temperature lasing from these nanowires.",

keywords = "III-V semiconductor, lasers, nanowire, optoelectronic devices",

author = "Sudha Mokkapati and Dhruv Saxena and Nian-Jiang and Qian Gao and Tan, {Hark Hoe} and Chennupati Jagadish",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 ; Conference date: 07-09-2014 Through 10-09-2014",

year = "2014",

month = dec,

day = "16",

doi = "10.1109/ISLC.2014.241",

language = "English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Mokkapati, S, Saxena, D, Nian-Jiang, Gao, Q, Tan, HH & Jagadish, C 2014, III-V semiconductor nanowire lasers. in Conference Digest - IEEE International Semiconductor Laser Conference., 6987528, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., pp. 217-218, 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014, Palma de Mallorca, Spain, 7/09/14. https://doi.org/10.1109/ISLC.2014.241

III-V semiconductor nanowire lasers. / Mokkapati, Sudha; Saxena, Dhruv; Nian-Jiang et al.
Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 217-218 6987528 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - III-V semiconductor nanowire lasers

AU - Mokkapati, Sudha

AU - Saxena, Dhruv

AU - Nian-Jiang,

AU - Gao, Qian

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2014/12/16

Y1 - 2014/12/16

N2 - We present results on the design of GaAs and InP nanowire lasers. We will discuss the growth of high quantum efficiency, taper free photonic nanowires for laser applications and demonstrate room-temperature lasing from these nanowires.

AB - We present results on the design of GaAs and InP nanowire lasers. We will discuss the growth of high quantum efficiency, taper free photonic nanowires for laser applications and demonstrate room-temperature lasing from these nanowires.

KW - III-V semiconductor

KW - lasers

KW - nanowire

KW - optoelectronic devices

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U2 - 10.1109/ISLC.2014.241

DO - 10.1109/ISLC.2014.241

M3 - Conference contribution

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 217

EP - 218

BT - Conference Digest - IEEE International Semiconductor Laser Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014

Y2 - 7 September 2014 through 10 September 2014

ER -

III-V semiconductor nanowire lasers

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