III-V Semiconductor Nanowire Photodetectors

Chennupati Jagadish*

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    III-V semiconductor nanowires have been demonstrated as potential candidates for infrared photodetection due to their unique morphology, optical and electrical properties as well as direct and tunable bandgap. Here our study on the fabrication and characterization of III-V nanowire infrared photodetectors is reviewed.

    Original languageEnglish
    Title of host publication2019 IEEE Photonics Conference, IPC 2019 - Proceedings
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781728106151
    DOIs
    Publication statusPublished - Sept 2019
    Event2019 IEEE Photonics Conference, IPC 2019 - San Antonio, United States
    Duration: 29 Sept 20193 Oct 2019

    Publication series

    Name2019 IEEE Photonics Conference, IPC 2019 - Proceedings

    Conference

    Conference2019 IEEE Photonics Conference, IPC 2019
    Country/TerritoryUnited States
    CitySan Antonio
    Period29/09/193/10/19

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