Imaging and modelling the internal gettering of interstitial iron by grain boundaries in multicrystalline silicon

Anyao Liu; Daniel Walter; Sieu Pheng Phang; Daniel MacDonald

doi:10.1109/PVSC.2012.6317611

Imaging and modelling the internal gettering of interstitial iron by grain boundaries in multicrystalline silicon

Anyao Liu^*, Daniel Walter, Sieu Pheng Phang, Daniel MacDonald

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

In this paper a simple one-dimensional diffusion-capture model is used to effectively characterise the reduction in interstitial Fe concentrations near grain boundaries in multicrystalline silicon by two fitting parameters: the diffusion length of Fe atoms and the gettering velocity at the grain boundary. The measurements are achieved by photoluminescence images taken before and after dissociating FeB pairs in silicon. The measurement artefacts of lateral photon scattering and lateral carrier diffusion are discussed. The method and the model are verified by a multicrystalline silicon wafer annealed at low temperatures which are known to result in diffusion-limited internal gettering of interstitial Fe.

Original language	English
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	248-253
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2012.6317611
Publication status	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: 3 Jun 2012 → 8 Jun 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	3/06/12 → 8/06/12

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10.1109/PVSC.2012.6317611

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Liu, A., Walter, D., Phang, S. P., & MacDonald, D. (2012). Imaging and modelling the internal gettering of interstitial iron by grain boundaries in multicrystalline silicon. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 248-253). Article 6317611 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6317611

@inproceedings{ae0afcc51110483bb8e6443a1be831b1,

title = "Imaging and modelling the internal gettering of interstitial iron by grain boundaries in multicrystalline silicon",

abstract = "In this paper a simple one-dimensional diffusion-capture model is used to effectively characterise the reduction in interstitial Fe concentrations near grain boundaries in multicrystalline silicon by two fitting parameters: the diffusion length of Fe atoms and the gettering velocity at the grain boundary. The measurements are achieved by photoluminescence images taken before and after dissociating FeB pairs in silicon. The measurement artefacts of lateral photon scattering and lateral carrier diffusion are discussed. The method and the model are verified by a multicrystalline silicon wafer annealed at low temperatures which are known to result in diffusion-limited internal gettering of interstitial Fe.",

keywords = "gettering, grain boundaries, iron, photoluminescence, silicon",

author = "Anyao Liu and Daniel Walter and Phang, {Sieu Pheng} and Daniel MacDonald",

year = "2012",

doi = "10.1109/PVSC.2012.6317611",

language = "English",

isbn = "9781467300643",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "248--253",

booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",

note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

}

Liu, A , Walter, D, Phang, SP & MacDonald, D 2012, Imaging and modelling the internal gettering of interstitial iron by grain boundaries in multicrystalline silicon. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6317611, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 248-253, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 3/06/12. https://doi.org/10.1109/PVSC.2012.6317611

Imaging and modelling the internal gettering of interstitial iron by grain boundaries in multicrystalline silicon. / Liu, Anyao ; Walter, Daniel; Phang, Sieu Pheng et al.
Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 248-253 6317611 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Imaging and modelling the internal gettering of interstitial iron by grain boundaries in multicrystalline silicon

AU - Liu, Anyao

AU - Walter, Daniel

AU - Phang, Sieu Pheng

AU - MacDonald, Daniel

PY - 2012

Y1 - 2012

N2 - In this paper a simple one-dimensional diffusion-capture model is used to effectively characterise the reduction in interstitial Fe concentrations near grain boundaries in multicrystalline silicon by two fitting parameters: the diffusion length of Fe atoms and the gettering velocity at the grain boundary. The measurements are achieved by photoluminescence images taken before and after dissociating FeB pairs in silicon. The measurement artefacts of lateral photon scattering and lateral carrier diffusion are discussed. The method and the model are verified by a multicrystalline silicon wafer annealed at low temperatures which are known to result in diffusion-limited internal gettering of interstitial Fe.

AB - In this paper a simple one-dimensional diffusion-capture model is used to effectively characterise the reduction in interstitial Fe concentrations near grain boundaries in multicrystalline silicon by two fitting parameters: the diffusion length of Fe atoms and the gettering velocity at the grain boundary. The measurements are achieved by photoluminescence images taken before and after dissociating FeB pairs in silicon. The measurement artefacts of lateral photon scattering and lateral carrier diffusion are discussed. The method and the model are verified by a multicrystalline silicon wafer annealed at low temperatures which are known to result in diffusion-limited internal gettering of interstitial Fe.

KW - gettering

KW - grain boundaries

KW - iron

KW - photoluminescence

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=84869425057&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2012.6317611

DO - 10.1109/PVSC.2012.6317611

M3 - Conference contribution

SN - 9781467300643

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 248

EP - 253

BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

T2 - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

Y2 - 3 June 2012 through 8 June 2012

ER -

Imaging and modelling the internal gettering of interstitial iron by grain boundaries in multicrystalline silicon

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