Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence

Xinbo Yang; D. Macdonald; A. Fell; A. Shalav; Lujia Xu; D. Walter; T. Ratcliff; E. Franklin; K. Weber; R. Elliman

doi:10.1063/1.4817525

Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence

Xinbo Yang^*, D. Macdonald, A. Fell, A. Shalav, Lujia Xu, D. Walter, T. Ratcliff, E. Franklin, K. Weber, R. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We present an approach to characterize the relative saturation current density (J_oe) and sheet resistance (R_SH) of laser doped regions on silicon wafers based on rapid photoluminescence (PL) imaging. In the absence of surface passivation layers, the R_SH of laser doped regions using a wide range of laser parameters is found to be inversely proportional to the PL intensity (I_PL). We explain the underlying mechanism for this correlation, which reveals that, in principle, I_PL is inversely proportional to J_oe at any injection level. The validity of this relationship under a wide range of typical experimental conditions is confirmed by numerical simulations. This method allows the optimal laser parameters for achieving low R_SH and J_oe to be determined from a simple PL image.

Original language	English
Article number	053107
Journal	Journal of Applied Physics
Volume	114
Issue number	5
DOIs	https://doi.org/10.1063/1.4817525
Publication status	Published - 7 Aug 2013

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title = "Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence",

abstract = "We present an approach to characterize the relative saturation current density (Joe) and sheet resistance (RSH) of laser doped regions on silicon wafers based on rapid photoluminescence (PL) imaging. In the absence of surface passivation layers, the RSH of laser doped regions using a wide range of laser parameters is found to be inversely proportional to the PL intensity (IPL). We explain the underlying mechanism for this correlation, which reveals that, in principle, IPL is inversely proportional to Joe at any injection level. The validity of this relationship under a wide range of typical experimental conditions is confirmed by numerical simulations. This method allows the optimal laser parameters for achieving low RSH and Joe to be determined from a simple PL image.",

author = "Xinbo Yang and D. Macdonald and A. Fell and A. Shalav and Lujia Xu and D. Walter and T. Ratcliff and E. Franklin and K. Weber and R. Elliman",

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TY - JOUR

T1 - Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence

AU - Yang, Xinbo

AU - Macdonald, D.

AU - Fell, A.

AU - Shalav, A.

AU - Xu, Lujia

AU - Walter, D.

AU - Ratcliff, T.

AU - Franklin, E.

AU - Weber, K.

AU - Elliman, R.

PY - 2013/8/7

Y1 - 2013/8/7

N2 - We present an approach to characterize the relative saturation current density (Joe) and sheet resistance (RSH) of laser doped regions on silicon wafers based on rapid photoluminescence (PL) imaging. In the absence of surface passivation layers, the RSH of laser doped regions using a wide range of laser parameters is found to be inversely proportional to the PL intensity (IPL). We explain the underlying mechanism for this correlation, which reveals that, in principle, IPL is inversely proportional to Joe at any injection level. The validity of this relationship under a wide range of typical experimental conditions is confirmed by numerical simulations. This method allows the optimal laser parameters for achieving low RSH and Joe to be determined from a simple PL image.

AB - We present an approach to characterize the relative saturation current density (Joe) and sheet resistance (RSH) of laser doped regions on silicon wafers based on rapid photoluminescence (PL) imaging. In the absence of surface passivation layers, the RSH of laser doped regions using a wide range of laser parameters is found to be inversely proportional to the PL intensity (IPL). We explain the underlying mechanism for this correlation, which reveals that, in principle, IPL is inversely proportional to Joe at any injection level. The validity of this relationship under a wide range of typical experimental conditions is confirmed by numerical simulations. This method allows the optimal laser parameters for achieving low RSH and Joe to be determined from a simple PL image.

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U2 - 10.1063/1.4817525

DO - 10.1063/1.4817525

M3 - Article

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 053107

ER -

Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence

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