Imaging Surface Recombination Velocities of Grain Boundaries in Multicrystalline Silicon Wafers via Photoluminescence

Hang Cheong Sio; Sieu Pheng Phang; Daniel Macdonald

doi:10.1002/solr.201600014

Imaging Surface Recombination Velocities of Grain Boundaries in Multicrystalline Silicon Wafers via Photoluminescence

Hang Cheong Sio^*, Sieu Pheng Phang, Daniel Macdonald

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We present a method for determining the effective surface recombination velocity (S_GB) of grain boundaries in silicon wafers, based on the photoluminescence contrast of the grain boundary and numerical modeling of the luminescence signal. It is found that in single-side passivated wafers, the luminescence contrast of a grain boundary is insensitive to lifetime variations in the neighboring grains, and hence can be directly correlated to S_GB. In combination with pattern recognition methods to locate the grain boundaries, this allows the S_GB of every grain boundary within a photoluminescence image to be explicitly determined and imaged.

Original language	English
Article number	1600014
Journal	Solar RRL
Volume	1
Issue number	1
DOIs	https://doi.org/10.1002/solr.201600014
Publication status	Published - 1 Jan 2017

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10.1002/solr.201600014

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title = "Imaging Surface Recombination Velocities of Grain Boundaries in Multicrystalline Silicon Wafers via Photoluminescence",

abstract = "We present a method for determining the effective surface recombination velocity (SGB) of grain boundaries in silicon wafers, based on the photoluminescence contrast of the grain boundary and numerical modeling of the luminescence signal. It is found that in single-side passivated wafers, the luminescence contrast of a grain boundary is insensitive to lifetime variations in the neighboring grains, and hence can be directly correlated to SGB. In combination with pattern recognition methods to locate the grain boundaries, this allows the SGB of every grain boundary within a photoluminescence image to be explicitly determined and imaged.",

author = "Sio, {Hang Cheong} and Phang, {Sieu Pheng} and Daniel Macdonald",

note = "Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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AU - Phang, Sieu Pheng

AU - Macdonald, Daniel

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Y1 - 2017/1/1

N2 - We present a method for determining the effective surface recombination velocity (SGB) of grain boundaries in silicon wafers, based on the photoluminescence contrast of the grain boundary and numerical modeling of the luminescence signal. It is found that in single-side passivated wafers, the luminescence contrast of a grain boundary is insensitive to lifetime variations in the neighboring grains, and hence can be directly correlated to SGB. In combination with pattern recognition methods to locate the grain boundaries, this allows the SGB of every grain boundary within a photoluminescence image to be explicitly determined and imaged.

AB - We present a method for determining the effective surface recombination velocity (SGB) of grain boundaries in silicon wafers, based on the photoluminescence contrast of the grain boundary and numerical modeling of the luminescence signal. It is found that in single-side passivated wafers, the luminescence contrast of a grain boundary is insensitive to lifetime variations in the neighboring grains, and hence can be directly correlated to SGB. In combination with pattern recognition methods to locate the grain boundaries, this allows the SGB of every grain boundary within a photoluminescence image to be explicitly determined and imaged.

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JO - Solar RRL

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Imaging Surface Recombination Velocities of Grain Boundaries in Multicrystalline Silicon Wafers via Photoluminescence

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