Impact of Al Doping on Surface Passivation of TiOxon Si

Wensheng Liang; Jingnan Tong; Parvathala Narangari; Stephane Armand; Teng Choon Kho; Marco Ernst; Daniel Walter; Sachin R. Surve; Keith Reid McIntosh; Matthew Stocks; Klaus J. Weber; Andrew Blakers; Kean Chern Fong

doi:10.1109/JPHOTOV.2020.2982169

Impact of Al Doping on Surface Passivation of TiO_xon Si

Wensheng Liang^*, Jingnan Tong, Parvathala Narangari, Stephane Armand, Teng Choon Kho, Marco Ernst, Daniel Walter, Sachin R. Surve, Keith Reid McIntosh, Matthew Stocks, Klaus J. Weber, Andrew Blakers, Kean Chern Fong

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Titania (TiOx) is re-emerging to be a passivating material for the surfaces of high-efficiency crystalline silicon solar cells. Numerous sources in the literature suggest that the surface passivation and thermal stability of TiOx deteriorates with increasing film thickness when the TiOx film is thicker than a sufficient thickness. To circumvent this limitation, this study presents a novel process of Al-doped TiOx (TiOx:Al) film, which demonstrates the potential for improved thermal stability and surface passivation. Based on grazing incident X-ray diffraction and UV-Raman measurements, the incorporation of Al impurity in TiOx effectively restrains the crystal phase transformation of the amorphous TiOx layer during deposition. Furthermore, the TiOx:Al films provide better thermal robustness up to 350 °C, which makes it highly compatible with Si solar cell fabrication processes.

Original language	English
Article number	9064928
Pages (from-to)	940-944
Number of pages	5
Journal	IEEE Journal of Photovoltaics
Volume	10
Issue number	4
DOIs	https://doi.org/10.1109/JPHOTOV.2020.2982169
Publication status	Published - Jul 2020

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10.1109/JPHOTOV.2020.2982169

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title = "Impact of Al Doping on Surface Passivation of TiOxon Si",

abstract = "Titania (TiOx) is re-emerging to be a passivating material for the surfaces of high-efficiency crystalline silicon solar cells. Numerous sources in the literature suggest that the surface passivation and thermal stability of TiOx deteriorates with increasing film thickness when the TiOx film is thicker than a sufficient thickness. To circumvent this limitation, this study presents a novel process of Al-doped TiOx (TiOx:Al) film, which demonstrates the potential for improved thermal stability and surface passivation. Based on grazing incident X-ray diffraction and UV-Raman measurements, the incorporation of Al impurity in TiOx effectively restrains the crystal phase transformation of the amorphous TiOx layer during deposition. Furthermore, the TiOx:Al films provide better thermal robustness up to 350 °C, which makes it highly compatible with Si solar cell fabrication processes.",

keywords = "Doping, TiO, solar cell, surface passivation",

author = "Wensheng Liang and Jingnan Tong and Parvathala Narangari and Stephane Armand and Kho, \{Teng Choon\} and Marco Ernst and Daniel Walter and Surve, \{Sachin R.\} and McIntosh, \{Keith Reid\} and Matthew Stocks and Weber, \{Klaus J.\} and Andrew Blakers and Fong, \{Kean Chern\}",

note = "{\textcopyright} 2011 The Authors",

year = "2020",

month = jul,

doi = "10.1109/JPHOTOV.2020.2982169",

language = "English",

volume = "10",

pages = "940--944",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE Electron Devices Society",

number = "4",

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TY - JOUR

T1 - Impact of Al Doping on Surface Passivation of TiOxon Si

AU - Liang, Wensheng

AU - Tong, Jingnan

AU - Narangari, Parvathala

AU - Armand, Stephane

AU - Kho, Teng Choon

AU - Ernst, Marco

AU - Walter, Daniel

AU - Surve, Sachin R.

AU - McIntosh, Keith Reid

AU - Stocks, Matthew

AU - Weber, Klaus J.

AU - Blakers, Andrew

AU - Fong, Kean Chern

PY - 2020/7

Y1 - 2020/7

N2 - Titania (TiOx) is re-emerging to be a passivating material for the surfaces of high-efficiency crystalline silicon solar cells. Numerous sources in the literature suggest that the surface passivation and thermal stability of TiOx deteriorates with increasing film thickness when the TiOx film is thicker than a sufficient thickness. To circumvent this limitation, this study presents a novel process of Al-doped TiOx (TiOx:Al) film, which demonstrates the potential for improved thermal stability and surface passivation. Based on grazing incident X-ray diffraction and UV-Raman measurements, the incorporation of Al impurity in TiOx effectively restrains the crystal phase transformation of the amorphous TiOx layer during deposition. Furthermore, the TiOx:Al films provide better thermal robustness up to 350 °C, which makes it highly compatible with Si solar cell fabrication processes.

AB - Titania (TiOx) is re-emerging to be a passivating material for the surfaces of high-efficiency crystalline silicon solar cells. Numerous sources in the literature suggest that the surface passivation and thermal stability of TiOx deteriorates with increasing film thickness when the TiOx film is thicker than a sufficient thickness. To circumvent this limitation, this study presents a novel process of Al-doped TiOx (TiOx:Al) film, which demonstrates the potential for improved thermal stability and surface passivation. Based on grazing incident X-ray diffraction and UV-Raman measurements, the incorporation of Al impurity in TiOx effectively restrains the crystal phase transformation of the amorphous TiOx layer during deposition. Furthermore, the TiOx:Al films provide better thermal robustness up to 350 °C, which makes it highly compatible with Si solar cell fabrication processes.

KW - Doping

KW - TiO

KW - solar cell

KW - surface passivation

UR - https://www.scopus.com/pages/publications/85088045879

U2 - 10.1109/JPHOTOV.2020.2982169

DO - 10.1109/JPHOTOV.2020.2982169

M3 - Article

SN - 2156-3381

VL - 10

SP - 940

EP - 944

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 4

M1 - 9064928

ER -

Impact of Al Doping on Surface Passivation of TiO_xon Si

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