Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers

F. E. Rougieux; N. E. Grant; D. Macdonald

doi:10.1016/j.egypro.2014.12.346

Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers

F. E. Rougieux^*, N. E. Grant, D. Macdonald

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

In this study, we investigate the nature of some recombination active defects limiting the lifetime in Czochralski (CZ) silicon wafers, in the millisecond range. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use lifetime spectroscopy combine with several annealing steps to help identify the defect. We demonstrate that the defect can be deactivated by annealing above 300°C. Our experimental findings suggest that vacancy-related pairs incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.

Original language	English
Pages (from-to)	81-84
Number of pages	4
Journal	Energy Procedia
Volume	60
Issue number	C
DOIs	https://doi.org/10.1016/j.egypro.2014.12.346
Publication status	Published - 2014
Event	E-MRS Spring Meeting 2014 Symposium Y - Advanced materials and characterization techniques for solar cells II, 2014 - Lille, France Duration: 26 May 2014 → 30 May 2014

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@article{f10e4516e5fa4bc18b3f0408b5a4a153,

title = "Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers",

abstract = "In this study, we investigate the nature of some recombination active defects limiting the lifetime in Czochralski (CZ) silicon wafers, in the millisecond range. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use lifetime spectroscopy combine with several annealing steps to help identify the defect. We demonstrate that the defect can be deactivated by annealing above 300°C. Our experimental findings suggest that vacancy-related pairs incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.",

keywords = "Czochralski, Defect, Minority carrier lifetime, Nitrogen, Silicon, Vacancy",

author = "Rougieux, {F. E.} and Grant, {N. E.} and D. Macdonald",

note = "Publisher Copyright: {\textcopyright} 2014 The Authors.; E-MRS Spring Meeting 2014 Symposium Y - Advanced materials and characterization techniques for solar cells II, 2014 ; Conference date: 26-05-2014 Through 30-05-2014",

year = "2014",

doi = "10.1016/j.egypro.2014.12.346",

language = "English",

volume = "60",

pages = "81--84",

journal = "Energy Procedia",

issn = "1876-6102",

publisher = "Elsevier B.V.",

number = "C",

}

TY - JOUR

T1 - Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers

AU - Rougieux, F. E.

AU - Grant, N. E.

AU - Macdonald, D.

PY - 2014

Y1 - 2014

N2 - In this study, we investigate the nature of some recombination active defects limiting the lifetime in Czochralski (CZ) silicon wafers, in the millisecond range. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use lifetime spectroscopy combine with several annealing steps to help identify the defect. We demonstrate that the defect can be deactivated by annealing above 300°C. Our experimental findings suggest that vacancy-related pairs incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.

AB - In this study, we investigate the nature of some recombination active defects limiting the lifetime in Czochralski (CZ) silicon wafers, in the millisecond range. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use lifetime spectroscopy combine with several annealing steps to help identify the defect. We demonstrate that the defect can be deactivated by annealing above 300°C. Our experimental findings suggest that vacancy-related pairs incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.

KW - Czochralski

KW - Defect

KW - Minority carrier lifetime

KW - Nitrogen

KW - Silicon

KW - Vacancy

UR - http://www.scopus.com/inward/record.url?scp=84922373395&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2014.12.346

DO - 10.1016/j.egypro.2014.12.346

M3 - Conference article

AN - SCOPUS:84922373395

SN - 1876-6102

VL - 60

SP - 81

EP - 84

JO - Energy Procedia

JF - Energy Procedia

IS - C

T2 - E-MRS Spring Meeting 2014 Symposium Y - Advanced materials and characterization techniques for solar cells II, 2014

Y2 - 26 May 2014 through 30 May 2014

ER -

Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers

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