Implant isolation of AlGaAs multilayer DBR

A. V.P. Coelho; H. Boudinov; T. V. Lippen; H. H. Tan; C. Jagadish

doi:10.1016/j.nimb.2003.12.059

Implant isolation of AlGaAs multilayer DBR

A. V.P. Coelho^*, H. Boudinov, T. V. Lippen, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

AlGaAs distributed Bragg reflector (DBR) structures isolation by proton irradiation was studied. The evolution of n- and p-type DBR structures lateral sheet resistance with the irradiated proton dose was measured. The vertical isolation behavior was also obtained and compared to the lateral one. No significant differences were observed. The implantation maximum energy for these structures was estimated. Thermal stability of DBR vertical isolation was studied. A 500 °C stability was obtained for samples implanted to a dose 2.5 times greater than the threshold dose of isolation.

Original language	English
Pages (from-to)	381-385
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	218
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2003.12.059
Publication status	Published - Jun 2004
Event	Proceedings of the Twelfth International Conference on Radiation - Gramado, Brazil Duration: 31 Aug 2003 → 5 Sept 2003

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@article{fffaea44366c4dbc9c37d13fde20310a,

title = "Implant isolation of AlGaAs multilayer DBR",

abstract = "AlGaAs distributed Bragg reflector (DBR) structures isolation by proton irradiation was studied. The evolution of n- and p-type DBR structures lateral sheet resistance with the irradiated proton dose was measured. The vertical isolation behavior was also obtained and compared to the lateral one. No significant differences were observed. The implantation maximum energy for these structures was estimated. Thermal stability of DBR vertical isolation was studied. A 500 °C stability was obtained for samples implanted to a dose 2.5 times greater than the threshold dose of isolation.",

keywords = "AlGaAs, DBR, Implantation, Isolation, VCSEL",

author = "Coelho, {A. V.P.} and H. Boudinov and Lippen, {T. V.} and Tan, {H. H.} and C. Jagadish",

year = "2004",

month = jun,

doi = "10.1016/j.nimb.2003.12.059",

language = "English",

volume = "218",

pages = "381--385",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Proceedings of the Twelfth International Conference on Radiation ; Conference date: 31-08-2003 Through 05-09-2003",

}

TY - JOUR

T1 - Implant isolation of AlGaAs multilayer DBR

AU - Coelho, A. V.P.

AU - Boudinov, H.

AU - Lippen, T. V.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2004/6

Y1 - 2004/6

N2 - AlGaAs distributed Bragg reflector (DBR) structures isolation by proton irradiation was studied. The evolution of n- and p-type DBR structures lateral sheet resistance with the irradiated proton dose was measured. The vertical isolation behavior was also obtained and compared to the lateral one. No significant differences were observed. The implantation maximum energy for these structures was estimated. Thermal stability of DBR vertical isolation was studied. A 500 °C stability was obtained for samples implanted to a dose 2.5 times greater than the threshold dose of isolation.

AB - AlGaAs distributed Bragg reflector (DBR) structures isolation by proton irradiation was studied. The evolution of n- and p-type DBR structures lateral sheet resistance with the irradiated proton dose was measured. The vertical isolation behavior was also obtained and compared to the lateral one. No significant differences were observed. The implantation maximum energy for these structures was estimated. Thermal stability of DBR vertical isolation was studied. A 500 °C stability was obtained for samples implanted to a dose 2.5 times greater than the threshold dose of isolation.

KW - AlGaAs

KW - DBR

KW - Implantation

KW - Isolation

KW - VCSEL

UR - http://www.scopus.com/inward/record.url?scp=2342612841&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2003.12.059

DO - 10.1016/j.nimb.2003.12.059

M3 - Conference article

SN - 0168-583X

VL - 218

SP - 381

EP - 385

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

T2 - Proceedings of the Twelfth International Conference on Radiation

Y2 - 31 August 2003 through 5 September 2003

ER -

Implant isolation of AlGaAs multilayer DBR

Abstract

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