TY - JOUR
T1 - Implant isolation of Zn-doped GaAs epilayers
T2 - Effects of ion species, doping concentration, and implantation temperature
AU - Deenapanray, Prakash N.K.
AU - Gao, Q.
AU - Jagadish, C.
PY - 2003/6/1
Y1 - 2003/6/1
N2 - The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was investigated using H, Li, C, and O ion implantation. Effects of ion species, doping concentration, and implantation temperature were also studied. Results showed that the substrate temperature have no effect on the isolation process, and the stability of isolation is related to defect clusters and not point-like defects.
AB - The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was investigated using H, Li, C, and O ion implantation. Effects of ion species, doping concentration, and implantation temperature were also studied. Results showed that the substrate temperature have no effect on the isolation process, and the stability of isolation is related to defect clusters and not point-like defects.
UR - http://www.scopus.com/inward/record.url?scp=0038680465&partnerID=8YFLogxK
U2 - 10.1063/1.1569664
DO - 10.1063/1.1569664
M3 - Article
SN - 0021-8979
VL - 93
SP - 9123
EP - 9129
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 11
ER -