Implant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature

Prakash N.K. Deenapanray; Q. Gao; C. Jagadish

doi:10.1063/1.1569664

Implant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature

Prakash N.K. Deenapanray^*, Q. Gao, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was investigated using H, Li, C, and O ion implantation. Effects of ion species, doping concentration, and implantation temperature were also studied. Results showed that the substrate temperature have no effect on the isolation process, and the stability of isolation is related to defect clusters and not point-like defects.

Original language	English
Pages (from-to)	9123-9129
Number of pages	7
Journal	Journal of Applied Physics
Volume	93
Issue number	11
DOIs	https://doi.org/10.1063/1.1569664
Publication status	Published - 1 Jun 2003

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title = "Implant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature",

abstract = "The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was investigated using H, Li, C, and O ion implantation. Effects of ion species, doping concentration, and implantation temperature were also studied. Results showed that the substrate temperature have no effect on the isolation process, and the stability of isolation is related to defect clusters and not point-like defects.",

author = "Deenapanray, \{Prakash N.K.\} and Q. Gao and C. Jagadish",

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T2 - Effects of ion species, doping concentration, and implantation temperature

AU - Deenapanray, Prakash N.K.

AU - Gao, Q.

AU - Jagadish, C.

PY - 2003/6/1

Y1 - 2003/6/1

N2 - The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was investigated using H, Li, C, and O ion implantation. Effects of ion species, doping concentration, and implantation temperature were also studied. Results showed that the substrate temperature have no effect on the isolation process, and the stability of isolation is related to defect clusters and not point-like defects.

AB - The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was investigated using H, Li, C, and O ion implantation. Effects of ion species, doping concentration, and implantation temperature were also studied. Results showed that the substrate temperature have no effect on the isolation process, and the stability of isolation is related to defect clusters and not point-like defects.

UR - https://www.scopus.com/pages/publications/0038680465

U2 - 10.1063/1.1569664

DO - 10.1063/1.1569664

M3 - Article

SN - 0021-8979

VL - 93

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EP - 9129

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Implant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature

Abstract

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