Implant isolation of ZnO

S. O. Kucheyev; C. Jagadish; J. S. Williams; P. N.K. Deenapanray; Mitsuaki Yano; Kazuto Koike; Shigehiko Sasa; Masataka Inoue; Ken Ichi Ogata

doi:10.1063/1.1542939

Implant isolation of ZnO

S. O. Kucheyev^*, C. Jagadish, J. S. Williams, P. N.K. Deenapanray, Mitsuaki Yano, Kazuto Koike, Shigehiko Sasa, Masataka Inoue, Ken Ichi Ogata

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

Ion-irradiation-induced electrical isolation in n-type singal-crystal ZnO epilayers was analyzed. Emphasis was on improving the thermal stability of isolation. The temperature dependence of sheet resistance was also analyzed. The analysis showed that effective levels associated with irradiation-produced defects in ZnO crystals were shallow.

Original language	English
Pages (from-to)	2972-2976
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	5
DOIs	https://doi.org/10.1063/1.1542939
Publication status	Published - 1 Mar 2003

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title = "Implant isolation of ZnO",

abstract = "Ion-irradiation-induced electrical isolation in n-type singal-crystal ZnO epilayers was analyzed. Emphasis was on improving the thermal stability of isolation. The temperature dependence of sheet resistance was also analyzed. The analysis showed that effective levels associated with irradiation-produced defects in ZnO crystals were shallow.",

author = "Kucheyev, {S. O.} and C. Jagadish and Williams, {J. S.} and Deenapanray, {P. N.K.} and Mitsuaki Yano and Kazuto Koike and Shigehiko Sasa and Masataka Inoue and Ogata, {Ken Ichi}",

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language = "English",

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AU - Kucheyev, S. O.

AU - Jagadish, C.

AU - Williams, J. S.

AU - Deenapanray, P. N.K.

AU - Yano, Mitsuaki

AU - Koike, Kazuto

AU - Sasa, Shigehiko

AU - Inoue, Masataka

AU - Ogata, Ken Ichi

PY - 2003/3/1

Y1 - 2003/3/1

N2 - Ion-irradiation-induced electrical isolation in n-type singal-crystal ZnO epilayers was analyzed. Emphasis was on improving the thermal stability of isolation. The temperature dependence of sheet resistance was also analyzed. The analysis showed that effective levels associated with irradiation-produced defects in ZnO crystals were shallow.

AB - Ion-irradiation-induced electrical isolation in n-type singal-crystal ZnO epilayers was analyzed. Emphasis was on improving the thermal stability of isolation. The temperature dependence of sheet resistance was also analyzed. The analysis showed that effective levels associated with irradiation-produced defects in ZnO crystals were shallow.

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U2 - 10.1063/1.1542939

DO - 10.1063/1.1542939

M3 - Article

SN - 0021-8979

VL - 93

SP - 2972

EP - 2976

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Implant isolation of ZnO

Abstract

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