Implantation angle dependent study of vacancy related defect profiles in ion implanted silicon

M. D.H. Lay; J. C. McCallum; C. Jagadish

doi:10.1016/j.physb.2003.09.150

Implantation angle dependent study of vacancy related defect profiles in ion implanted silicon

M. D.H. Lay^*, J. C. McCallum, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V₂^-) in n-type 0.7-1.1 Ωcm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 10° twists from the [1 1 0] direction and various tilts from the [1 0 0] direction then implanted with 600 keV P to a dose of 5 × 10⁸ cm^-2. The peak depth of the VP/V₂^- profile exhibits a systematic variation with the implantation angle: narrowing and increasing in peak concentration as the implantation angle is progressively varied from the aligned direction. The defect profiles are approximately 0.3 μm deeper than the peak in the vacancy profile predicted using the binary collision code Crystal-TRIM. Surface-enhanced annihilation of migrating defects has been considered as the cause of this.

Original language	English
Pages (from-to)	748-751
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.150
Publication status	Published - 31 Dec 2003
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 28 Jul 2003 → 1 Aug 2003

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10.1016/j.physb.2003.09.150

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@article{eecd4d7215ea44c79aeb1671311b0b9e,

title = "Implantation angle dependent study of vacancy related defect profiles in ion implanted silicon",

abstract = "The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V2-) in n-type 0.7-1.1 Ωcm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 10° twists from the [1 1 0] direction and various tilts from the [1 0 0] direction then implanted with 600 keV P to a dose of 5 × 108 cm-2. The peak depth of the VP/V2- profile exhibits a systematic variation with the implantation angle: narrowing and increasing in peak concentration as the implantation angle is progressively varied from the aligned direction. The defect profiles are approximately 0.3 μm deeper than the peak in the vacancy profile predicted using the binary collision code Crystal-TRIM. Surface-enhanced annihilation of migrating defects has been considered as the cause of this.",

keywords = "Channeling, Deep-level transient spectroscopy, Ion implantation, Silicon",

author = "Lay, {M. D.H.} and McCallum, {J. C.} and C. Jagadish",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.150",

language = "English",

volume = "340-342",

pages = "748--751",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

note = "Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

}

TY - JOUR

T1 - Implantation angle dependent study of vacancy related defect profiles in ion implanted silicon

AU - Lay, M. D.H.

AU - McCallum, J. C.

AU - Jagadish, C.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V2-) in n-type 0.7-1.1 Ωcm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 10° twists from the [1 1 0] direction and various tilts from the [1 0 0] direction then implanted with 600 keV P to a dose of 5 × 108 cm-2. The peak depth of the VP/V2- profile exhibits a systematic variation with the implantation angle: narrowing and increasing in peak concentration as the implantation angle is progressively varied from the aligned direction. The defect profiles are approximately 0.3 μm deeper than the peak in the vacancy profile predicted using the binary collision code Crystal-TRIM. Surface-enhanced annihilation of migrating defects has been considered as the cause of this.

AB - The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V2-) in n-type 0.7-1.1 Ωcm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 10° twists from the [1 1 0] direction and various tilts from the [1 0 0] direction then implanted with 600 keV P to a dose of 5 × 108 cm-2. The peak depth of the VP/V2- profile exhibits a systematic variation with the implantation angle: narrowing and increasing in peak concentration as the implantation angle is progressively varied from the aligned direction. The defect profiles are approximately 0.3 μm deeper than the peak in the vacancy profile predicted using the binary collision code Crystal-TRIM. Surface-enhanced annihilation of migrating defects has been considered as the cause of this.

KW - Channeling

KW - Deep-level transient spectroscopy

KW - Ion implantation

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0347134665&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2003.09.150

DO - 10.1016/j.physb.2003.09.150

M3 - Conference article

SN - 0921-4526

VL - 340-342

SP - 748

EP - 751

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Implantation angle dependent study of vacancy related defect profiles in ion implanted silicon

Abstract

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