Implantation-induced amorphization of InP characterized with perturbed angular correlation

The perturbed angular correlation (PAC) technique has been used to characterize the implantation-induced crystal line-to-amorphous transformation in InP. Radioactive ¹¹¹In probes were first introduced in InP substrates which were then irradiated with Ge ions over an ion-dose range extending 2 orders of magnitude beyond that required for amorphization. Crystalline, disordered and amorphous probe environments were subsequently identified with PAC. The dose dependence of the relative fractions of the individual probe environments were determined, a direct amorphization process consistent with the overlap model was quantified and evidence for a second amorphization process via the overlap of disordered regions was observed. Given the ability to differentiate disordered and amorphous probe environments, a greater effective resolution was achieved with the PAC technique compared with other common analytical methodologies.