Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition

Q. Gao; P. N.K. Deenapanray; H. H. Tan; C. Jagadish

doi:10.1063/1.1621089

Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition

Q. Gao^*, P. N.K. Deenapanray, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The reasons behind the implantation-induced electrical isolation of GaAsN epilayers were studied. Metallorganic chemical vapor deposition was used to grow GaAsN epilayers. Ion implantation caused an increase in the sheet resistance of GaAsN layers by about five or six orders of magnitude. The dependence of thermal stability of electrical isolation in GaAsN on the ratio of the final fluence to the threshold fluence was also investigated.

Original language	English
Pages (from-to)	3386-3388
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	16
DOIs	https://doi.org/10.1063/1.1621089
Publication status	Published - 20 Oct 2003

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abstract = "The reasons behind the implantation-induced electrical isolation of GaAsN epilayers were studied. Metallorganic chemical vapor deposition was used to grow GaAsN epilayers. Ion implantation caused an increase in the sheet resistance of GaAsN layers by about five or six orders of magnitude. The dependence of thermal stability of electrical isolation in GaAsN on the ratio of the final fluence to the threshold fluence was also investigated.",

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N2 - The reasons behind the implantation-induced electrical isolation of GaAsN epilayers were studied. Metallorganic chemical vapor deposition was used to grow GaAsN epilayers. Ion implantation caused an increase in the sheet resistance of GaAsN layers by about five or six orders of magnitude. The dependence of thermal stability of electrical isolation in GaAsN on the ratio of the final fluence to the threshold fluence was also investigated.

AB - The reasons behind the implantation-induced electrical isolation of GaAsN epilayers were studied. Metallorganic chemical vapor deposition was used to grow GaAsN epilayers. Ion implantation caused an increase in the sheet resistance of GaAsN layers by about five or six orders of magnitude. The dependence of thermal stability of electrical isolation in GaAsN on the ratio of the final fluence to the threshold fluence was also investigated.

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Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition

Abstract

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