Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition

Q. Gao; P. N.K. Deenapanray; H. H. Tan; C. Jagadish

doi:10.1063/1.1621089

Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition

Q. Gao^*, P. N.K. Deenapanray, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The reasons behind the implantation-induced electrical isolation of GaAsN epilayers were studied. Metallorganic chemical vapor deposition was used to grow GaAsN epilayers. Ion implantation caused an increase in the sheet resistance of GaAsN layers by about five or six orders of magnitude. The dependence of thermal stability of electrical isolation in GaAsN on the ratio of the final fluence to the threshold fluence was also investigated.

Original language	English
Pages (from-to)	3386-3388
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	16
DOIs	https://doi.org/10.1063/1.1621089
Publication status	Published - 20 Oct 2003

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title = "Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition",

abstract = "The reasons behind the implantation-induced electrical isolation of GaAsN epilayers were studied. Metallorganic chemical vapor deposition was used to grow GaAsN epilayers. Ion implantation caused an increase in the sheet resistance of GaAsN layers by about five or six orders of magnitude. The dependence of thermal stability of electrical isolation in GaAsN on the ratio of the final fluence to the threshold fluence was also investigated.",

author = "Q. Gao and Deenapanray, \{P. N.K.\} and Tan, \{H. H.\} and C. Jagadish",

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AU - Deenapanray, P. N.K.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2003/10/20

Y1 - 2003/10/20

N2 - The reasons behind the implantation-induced electrical isolation of GaAsN epilayers were studied. Metallorganic chemical vapor deposition was used to grow GaAsN epilayers. Ion implantation caused an increase in the sheet resistance of GaAsN layers by about five or six orders of magnitude. The dependence of thermal stability of electrical isolation in GaAsN on the ratio of the final fluence to the threshold fluence was also investigated.

AB - The reasons behind the implantation-induced electrical isolation of GaAsN epilayers were studied. Metallorganic chemical vapor deposition was used to grow GaAsN epilayers. Ion implantation caused an increase in the sheet resistance of GaAsN layers by about five or six orders of magnitude. The dependence of thermal stability of electrical isolation in GaAsN on the ratio of the final fluence to the threshold fluence was also investigated.

UR - https://www.scopus.com/pages/publications/0242664794

U2 - 10.1063/1.1621089

DO - 10.1063/1.1621089

M3 - Article

SN - 0003-6951

VL - 83

SP - 3386

EP - 3388

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition

Abstract

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