@inproceedings{655241daf1d144368d546a7451246866,
title = "Implications of laser-doping parameters and contact opening size on contact resistivity",
abstract = " Advanced silicon solar cells implement complex structures on both front and rear side. Laser processing has been shown to be a versatile and cost-effective technology for such applications. Local silicon doping or contact opening via ablation are two established process steps. In this work, we investigate their influence on the quality of local contacts with a focus on contact resistivity. We determine values for ρ C down to 70 μΩ cm 2 and 30 μΩ cm 2 for phosphorus and boron respectively, on a simple test structure with the help of three-dimensional numerical simulations.",
keywords = "Contact opening, contact resistivity, laser ablation, laser doping, metallization, silicon",
author = "Huyeng, {Jonas D.} and Marco Ernst and Fong, {Kean Chern} and Daniel Walter and Andrew Blakers",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",
year = "2018",
month = nov,
day = "26",
doi = "10.1109/PVSC.2018.8547209",
language = "English",
series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1008--1012",
booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",
address = "United States",
}