IMPLICATIONS OF THE SOLID-PHASE AMORPHOUS TO CRYSTALLINE TRANSFORMATION FOR SHALLOW-JUNCTION PROCESSING.

D. M. Maher; T. E. Seidel; J. S. Williams; R. G. Elliman; R. V. Knoell; M. B. Ellington; R. Hull; D. C. Jacobson

IMPLICATIONS OF THE SOLID-PHASE AMORPHOUS TO CRYSTALLINE TRANSFORMATION FOR SHALLOW-JUNCTION PROCESSING.

D. M. Maher^*, T. E. Seidel, J. S. Williams, R. G. Elliman, R. V. Knoell, M. B. Ellington, R. Hull, D. C. Jacobson

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Recent fundamental investigations of the solid-phase amorphous to crystalline transformation in silicon are reviewed. Three modes of inducing solid-phase regrowth are discussed, namely furnace processing, rapid-thermal processing and ion-beam processing. Topics emphasized include: extended defect states of the material; incubation solid-phase regrowth; continuous solid-phase regrowth; and the constraints which extended-defect annealling and dopant-profile broadening impose on obtaining n** plus and p** plus shallow junctions by a technology which is based on a preamorphization, dopant implant and solid-phase expitaxial regrowth sequence.

Original language	English
Pages (from-to)	678-695
Number of pages	18
Journal	Proceedings - The Electrochemical Society
Volume	86-4
Publication status	Published - 1986
Externally published	Yes

Cite this

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title = "IMPLICATIONS OF THE SOLID-PHASE AMORPHOUS TO CRYSTALLINE TRANSFORMATION FOR SHALLOW-JUNCTION PROCESSING.",

abstract = "Recent fundamental investigations of the solid-phase amorphous to crystalline transformation in silicon are reviewed. Three modes of inducing solid-phase regrowth are discussed, namely furnace processing, rapid-thermal processing and ion-beam processing. Topics emphasized include: extended defect states of the material; incubation solid-phase regrowth; continuous solid-phase regrowth; and the constraints which extended-defect annealling and dopant-profile broadening impose on obtaining n** plus and p** plus shallow junctions by a technology which is based on a preamorphization, dopant implant and solid-phase expitaxial regrowth sequence.",

author = "Maher, {D. M.} and Seidel, {T. E.} and Williams, {J. S.} and Elliman, {R. G.} and Knoell, {R. V.} and Ellington, {M. B.} and R. Hull and Jacobson, {D. C.}",

year = "1986",

language = "English",

volume = "86-4",

pages = "678--695",

journal = "Proceedings - The Electrochemical Society",

issn = "0161-6374",

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TY - JOUR

T1 - IMPLICATIONS OF THE SOLID-PHASE AMORPHOUS TO CRYSTALLINE TRANSFORMATION FOR SHALLOW-JUNCTION PROCESSING.

AU - Maher, D. M.

AU - Seidel, T. E.

AU - Williams, J. S.

AU - Elliman, R. G.

AU - Knoell, R. V.

AU - Ellington, M. B.

AU - Hull, R.

AU - Jacobson, D. C.

PY - 1986

Y1 - 1986

N2 - Recent fundamental investigations of the solid-phase amorphous to crystalline transformation in silicon are reviewed. Three modes of inducing solid-phase regrowth are discussed, namely furnace processing, rapid-thermal processing and ion-beam processing. Topics emphasized include: extended defect states of the material; incubation solid-phase regrowth; continuous solid-phase regrowth; and the constraints which extended-defect annealling and dopant-profile broadening impose on obtaining n** plus and p** plus shallow junctions by a technology which is based on a preamorphization, dopant implant and solid-phase expitaxial regrowth sequence.

AB - Recent fundamental investigations of the solid-phase amorphous to crystalline transformation in silicon are reviewed. Three modes of inducing solid-phase regrowth are discussed, namely furnace processing, rapid-thermal processing and ion-beam processing. Topics emphasized include: extended defect states of the material; incubation solid-phase regrowth; continuous solid-phase regrowth; and the constraints which extended-defect annealling and dopant-profile broadening impose on obtaining n** plus and p** plus shallow junctions by a technology which is based on a preamorphization, dopant implant and solid-phase expitaxial regrowth sequence.

UR - http://www.scopus.com/inward/record.url?scp=0022906688&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0022906688

SN - 0161-6374

VL - 86-4

SP - 678

EP - 695

JO - Proceedings - The Electrochemical Society

JF - Proceedings - The Electrochemical Society

ER -

IMPLICATIONS OF THE SOLID-PHASE AMORPHOUS TO CRYSTALLINE TRANSFORMATION FOR SHALLOW-JUNCTION PROCESSING.

Abstract

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