Improved carrier collection in intermixed InGaAs/GaAs quantum wells

L. V. Dao; M. B. Johnston; M. Gal; L. Fu; H. H. Tan; C. Jagadish

doi:10.1063/1.122780

Improved carrier collection in intermixed InGaAs/GaAs quantum wells

L. V. Dao^*, M. B. Johnston, M. Gal, L. Fu, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We have used photoluminescence up conversion to study the carrier capture times into intermixed InGaAs/GaAs quantum wells. We have found that the capture into the intermixed wells is markedly faster than capture into the reference (unintermixed) quantum wells. The reasons for the significant reduction in the capture time is related to the shape of the intermixed quantum well. Such a reduction in the capture time is beneficial both in terms of the quantum efficiency and the frequency response of intermixed optoelectronic devices.

Original language	English
Pages (from-to)	3408-3410
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	23
DOIs	https://doi.org/10.1063/1.122780
Publication status	Published - 1998

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abstract = "We have used photoluminescence up conversion to study the carrier capture times into intermixed InGaAs/GaAs quantum wells. We have found that the capture into the intermixed wells is markedly faster than capture into the reference (unintermixed) quantum wells. The reasons for the significant reduction in the capture time is related to the shape of the intermixed quantum well. Such a reduction in the capture time is beneficial both in terms of the quantum efficiency and the frequency response of intermixed optoelectronic devices.",

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AU - Johnston, M. B.

AU - Gal, M.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

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AB - We have used photoluminescence up conversion to study the carrier capture times into intermixed InGaAs/GaAs quantum wells. We have found that the capture into the intermixed wells is markedly faster than capture into the reference (unintermixed) quantum wells. The reasons for the significant reduction in the capture time is related to the shape of the intermixed quantum well. Such a reduction in the capture time is beneficial both in terms of the quantum efficiency and the frequency response of intermixed optoelectronic devices.

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DO - 10.1063/1.122780

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JF - Applied Physics Letters

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Improved carrier collection in intermixed InGaAs/GaAs quantum wells

Abstract

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