Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer

S. Parola; A. Vauthelin; J. Tournet; J. Kret; J. El Husseini; F. Martinez; Y. Rouillard; E. Tournié; Y. Cuminal

doi:10.1016/j.solmat.2019.110042

Improved efficiency of GaSb solar cells using an Al_0.50Ga_0.50As_0.04Sb_0.96 window layer

S. Parola^*, A. Vauthelin, J. Tournet, J. Kret, J. El Husseini, F. Martinez, Y. Rouillard, E. Tournié, Y. Cuminal

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The increasing number of subcells in multi-junction structures imposes the use of narrow bandgaps for a full harvesting of the solar spectrum. In this context, gallium antimonide (GaSb) and its lattice-matched alloys offer a great potential. To date, GaSb-based multi-junction solar cells exhibit experimental results below theoretical expectations, due to a limiting GaSb subcell. In this paper, a new design of GaSb cells comprising an Al_0.50Ga_0.50As_0.04Sb_0.96 window layer is studied. With this design, an excellent conversion efficiency of 7.2% is achieved under 1 sun (AM1.5G) illumination. This performance is attributed to a significant improvement in short-circuit current.

Original language	English
Article number	110042
Journal	Solar Energy Materials and Solar Cells
Volume	200
DOIs	https://doi.org/10.1016/j.solmat.2019.110042
Publication status	Published - 15 Sept 2019
Externally published	Yes

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title = "Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer",

abstract = "The increasing number of subcells in multi-junction structures imposes the use of narrow bandgaps for a full harvesting of the solar spectrum. In this context, gallium antimonide (GaSb) and its lattice-matched alloys offer a great potential. To date, GaSb-based multi-junction solar cells exhibit experimental results below theoretical expectations, due to a limiting GaSb subcell. In this paper, a new design of GaSb cells comprising an Al0.50Ga0.50As0.04Sb0.96 window layer is studied. With this design, an excellent conversion efficiency of 7.2% is achieved under 1 sun (AM1.5G) illumination. This performance is attributed to a significant improvement in short-circuit current.",

keywords = "AlGaAsSb, Antimonide alloys, GaSb, III-V multi-junction solar cells, Window layer",

author = "S. Parola and A. Vauthelin and J. Tournet and J. Kret and {El Husseini}, J. and F. Martinez and Y. Rouillard and E. Tourni{\'e} and Y. Cuminal",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = sep,

day = "15",

doi = "10.1016/j.solmat.2019.110042",

language = "English",

volume = "200",

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TY - JOUR

T1 - Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer

AU - Parola, S.

AU - Vauthelin, A.

AU - Tournet, J.

AU - Kret, J.

AU - El Husseini, J.

AU - Martinez, F.

AU - Rouillard, Y.

AU - Tournié, E.

AU - Cuminal, Y.

PY - 2019/9/15

Y1 - 2019/9/15

N2 - The increasing number of subcells in multi-junction structures imposes the use of narrow bandgaps for a full harvesting of the solar spectrum. In this context, gallium antimonide (GaSb) and its lattice-matched alloys offer a great potential. To date, GaSb-based multi-junction solar cells exhibit experimental results below theoretical expectations, due to a limiting GaSb subcell. In this paper, a new design of GaSb cells comprising an Al0.50Ga0.50As0.04Sb0.96 window layer is studied. With this design, an excellent conversion efficiency of 7.2% is achieved under 1 sun (AM1.5G) illumination. This performance is attributed to a significant improvement in short-circuit current.

AB - The increasing number of subcells in multi-junction structures imposes the use of narrow bandgaps for a full harvesting of the solar spectrum. In this context, gallium antimonide (GaSb) and its lattice-matched alloys offer a great potential. To date, GaSb-based multi-junction solar cells exhibit experimental results below theoretical expectations, due to a limiting GaSb subcell. In this paper, a new design of GaSb cells comprising an Al0.50Ga0.50As0.04Sb0.96 window layer is studied. With this design, an excellent conversion efficiency of 7.2% is achieved under 1 sun (AM1.5G) illumination. This performance is attributed to a significant improvement in short-circuit current.

KW - AlGaAsSb

KW - Antimonide alloys

KW - GaSb

KW - III-V multi-junction solar cells

KW - Window layer

UR - http://www.scopus.com/inward/record.url?scp=85068504883&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2019.110042

DO - 10.1016/j.solmat.2019.110042

M3 - Article

SN - 0927-0248

VL - 200

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

M1 - 110042

ER -

Improved efficiency of GaSb solar cells using an Al_0.50Ga_0.50As_0.04Sb_0.96 window layer

Abstract

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