Improved GaAs nanowire solar cells using AlGaAs for surface passivation

Y. H.J. Lee*, Z. Li, L. Fu, P. Parkinson, K. Vora, H. H. Tan, C. Jagadish

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (η) of 4.22%. This work suggests a promising route to optimize NWSCs.

Original languageEnglish
Title of host publication2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages131-132
Number of pages2
DOIs
Publication statusPublished - 2012
Event2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia
Duration: 12 Dec 201214 Dec 2012

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/TerritoryAustralia
CityMelbourne, VIC
Period12/12/1214/12/12

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