TY - GEN
T1 - Improved GaAs nanowire solar cells using AlGaAs for surface passivation
AU - Lee, Y. H.J.
AU - Li, Z.
AU - Fu, L.
AU - Parkinson, P.
AU - Vora, K.
AU - Tan, H. H.
AU - Jagadish, C.
PY - 2012
Y1 - 2012
N2 - Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (η) of 4.22%. This work suggests a promising route to optimize NWSCs.
AB - Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (η) of 4.22%. This work suggests a promising route to optimize NWSCs.
UR - http://www.scopus.com/inward/record.url?scp=84875590289&partnerID=8YFLogxK
U2 - 10.1109/COMMAD.2012.6472395
DO - 10.1109/COMMAD.2012.6472395
M3 - Conference contribution
SN - 9781467330459
T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
SP - 131
EP - 132
BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Y2 - 12 December 2012 through 14 December 2012
ER -