Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence

H. H. Tan; L. Fu; M. B. Johnston; L. V. Dao; M. Gal; C. Jagadish

doi:10.1109/COMMAD.1998.791616

Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence

H. H. Tan^*, L. Fu, M. B. Johnston, L. V. Dao, M. Gal, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

Ion (proton) implantation was used to induce intermixing in GaAs-AlGaAs quantum wells. Very large energy shifts (up to 160 meV) were observed after annealing. However, the energy shift was further improved with a repeated implant-anneal sequence. Up to about a factor of two increase in the energy shifts were obtained. This sequence was then used to fabricate laser diodes for multi-wavelength device integration. A remarkable improvement in the laser threshold characteristics was obtained with this sequence compared to a single implant.

Original language	English
Pages	187-190
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.1998.791616
Publication status	Published - 1999
Event	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust Duration: 14 Dec 1998 → 16 Dec 1998

Conference

Conference	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
City	Perth, WA, Aust
Period	14/12/98 → 16/12/98

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10.1109/COMMAD.1998.791616

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title = "Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence",

abstract = "Ion (proton) implantation was used to induce intermixing in GaAs-AlGaAs quantum wells. Very large energy shifts (up to 160 meV) were observed after annealing. However, the energy shift was further improved with a repeated implant-anneal sequence. Up to about a factor of two increase in the energy shifts were obtained. This sequence was then used to fabricate laser diodes for multi-wavelength device integration. A remarkable improvement in the laser threshold characteristics was obtained with this sequence compared to a single implant.",

author = "Tan, {H. H.} and L. Fu and Johnston, {M. B.} and Dao, {L. V.} and M. Gal and C. Jagadish",

year = "1999",

doi = "10.1109/COMMAD.1998.791616",

language = "English",

pages = "187--190",

note = "Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

}

Tan, HH , Fu, L, Johnston, MB, Dao, LV, Gal, M & Jagadish, C 1999, 'Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence', Paper presented at Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, 14/12/98 - 16/12/98 pp. 187-190. https://doi.org/10.1109/COMMAD.1998.791616

TY - CONF

T1 - Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence

AU - Tan, H. H.

AU - Fu, L.

AU - Johnston, M. B.

AU - Dao, L. V.

AU - Gal, M.

AU - Jagadish, C.

PY - 1999

Y1 - 1999

N2 - Ion (proton) implantation was used to induce intermixing in GaAs-AlGaAs quantum wells. Very large energy shifts (up to 160 meV) were observed after annealing. However, the energy shift was further improved with a repeated implant-anneal sequence. Up to about a factor of two increase in the energy shifts were obtained. This sequence was then used to fabricate laser diodes for multi-wavelength device integration. A remarkable improvement in the laser threshold characteristics was obtained with this sequence compared to a single implant.

AB - Ion (proton) implantation was used to induce intermixing in GaAs-AlGaAs quantum wells. Very large energy shifts (up to 160 meV) were observed after annealing. However, the energy shift was further improved with a repeated implant-anneal sequence. Up to about a factor of two increase in the energy shifts were obtained. This sequence was then used to fabricate laser diodes for multi-wavelength device integration. A remarkable improvement in the laser threshold characteristics was obtained with this sequence compared to a single implant.

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U2 - 10.1109/COMMAD.1998.791616

DO - 10.1109/COMMAD.1998.791616

M3 - Paper

AN - SCOPUS:0032691857

SP - 187

EP - 190

T2 - Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 14 December 1998 through 16 December 1998

ER -

Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence

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