Improved performance of GaAs-based terahertz emitters

C. Headley; L. Fu; P. Parkinson; X. Xu; J. Lloyd-Hughes; C. Jagadish; M. B. Johnston

doi:10.1109/ICIMW.2010.5612725

Improved performance of GaAs-based terahertz emitters

C. Headley^*, L. Fu, P. Parkinson, X. Xu, J. Lloyd-Hughes, C. Jagadish, M. B. Johnston

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have improved the stability and performance of terahertz photoconductive (Auston) switches using a combination of (NH₄)₂S surface passivation and silicon nitride (Si₃N₄) encapsulation. The passivation and encapsulation processes increased the average terahertz power generated four-fold.

Original language	English
Title of host publication	IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
DOIs	https://doi.org/10.1109/ICIMW.2010.5612725
Publication status	Published - 2010
Event	35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 - Rome, Italy Duration: 5 Sept 2010 → 10 Sept 2010

Publication series

Name	IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

Conference

Conference	35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010
Country/Territory	Italy
City	Rome
Period	5/09/10 → 10/09/10

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10.1109/ICIMW.2010.5612725

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Headley, C., Fu, L., Parkinson, P., Xu, X., Lloyd-Hughes, J., Jagadish, C., & Johnston, M. B. (2010). Improved performance of GaAs-based terahertz emitters. In IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide Article 5612725 (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide). https://doi.org/10.1109/ICIMW.2010.5612725

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title = "Improved performance of GaAs-based terahertz emitters",

abstract = "We have improved the stability and performance of terahertz photoconductive (Auston) switches using a combination of (NH4)2S surface passivation and silicon nitride (Si3N4) encapsulation. The passivation and encapsulation processes increased the average terahertz power generated four-fold.",

author = "C. Headley and L. Fu and P. Parkinson and X. Xu and J. Lloyd-Hughes and C. Jagadish and Johnston, {M. B.}",

year = "2010",

doi = "10.1109/ICIMW.2010.5612725",

language = "English",

isbn = "9781424466573",

series = "IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide",

booktitle = "IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide",

note = "35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 ; Conference date: 05-09-2010 Through 10-09-2010",

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Headley, C, Fu, L, Parkinson, P, Xu, X, Lloyd-Hughes, J, Jagadish, C & Johnston, MB 2010, Improved performance of GaAs-based terahertz emitters. in IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide., 5612725, IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide, 35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010, Rome, Italy, 5/09/10. https://doi.org/10.1109/ICIMW.2010.5612725

Improved performance of GaAs-based terahertz emitters. / Headley, C.; Fu, L.; Parkinson, P. et al.
IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. 2010. 5612725 (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improved performance of GaAs-based terahertz emitters

AU - Headley, C.

AU - Fu, L.

AU - Parkinson, P.

AU - Xu, X.

AU - Lloyd-Hughes, J.

AU - Jagadish, C.

AU - Johnston, M. B.

PY - 2010

Y1 - 2010

N2 - We have improved the stability and performance of terahertz photoconductive (Auston) switches using a combination of (NH4)2S surface passivation and silicon nitride (Si3N4) encapsulation. The passivation and encapsulation processes increased the average terahertz power generated four-fold.

AB - We have improved the stability and performance of terahertz photoconductive (Auston) switches using a combination of (NH4)2S surface passivation and silicon nitride (Si3N4) encapsulation. The passivation and encapsulation processes increased the average terahertz power generated four-fold.

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U2 - 10.1109/ICIMW.2010.5612725

DO - 10.1109/ICIMW.2010.5612725

M3 - Conference contribution

SN - 9781424466573

T3 - IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

BT - IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

T2 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010

Y2 - 5 September 2010 through 10 September 2010

ER -

Headley C, Fu L, Parkinson P, Xu X, Lloyd-Hughes J, Jagadish C et al. Improved performance of GaAs-based terahertz emitters. In IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. 2010. 5612725. (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide). doi: 10.1109/ICIMW.2010.5612725

Improved performance of GaAs-based terahertz emitters

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