Improved performance of InGaAs/GaAs quantum dot solar cells using Si-modulation doping

H. F. Lu; L. Fu; G. Jolley; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2012.6472393

Improved performance of InGaAs/GaAs quantum dot solar cells using Si-modulation doping

H. F. Lu^*, L. Fu, G. Jolley, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

N-type silicon modulation doping was introduced into the barrier layers of InGaAs/GaAs quantum dot solar cells (QDSC) at two different doping concentrations. An increased energy conversion efficiency of 8.91 % was obtained for the modulation doped device compared to 6.95 % of the undoped sample due to the additional electron population in the active structure.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	127-128
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472393
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472393

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Lu, H. F., Fu, L., Jolley, G., Tan, H. H., & Jagadish, C. (2012). Improved performance of InGaAs/GaAs quantum dot solar cells using Si-modulation doping. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 127-128). Article 6472393 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472393

@inproceedings{380ca863d54147e082814a6ded68770b,

title = "Improved performance of InGaAs/GaAs quantum dot solar cells using Si-modulation doping",

abstract = "N-type silicon modulation doping was introduced into the barrier layers of InGaAs/GaAs quantum dot solar cells (QDSC) at two different doping concentrations. An increased energy conversion efficiency of 8.91 % was obtained for the modulation doped device compared to 6.95 % of the undoped sample due to the additional electron population in the active structure.",

author = "Lu, {H. F.} and L. Fu and G. Jolley and Tan, {H. H.} and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472393",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "127--128",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Lu, HF, Fu, L, Jolley, G, Tan, HH & Jagadish, C 2012, Improved performance of InGaAs/GaAs quantum dot solar cells using Si-modulation doping. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472393, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 127-128, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472393

Improved performance of InGaAs/GaAs quantum dot solar cells using Si-modulation doping. / Lu, H. F.; Fu, L.; Jolley, G. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 127-128 6472393 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improved performance of InGaAs/GaAs quantum dot solar cells using Si-modulation doping

AU - Lu, H. F.

AU - Fu, L.

AU - Jolley, G.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2012

Y1 - 2012

N2 - N-type silicon modulation doping was introduced into the barrier layers of InGaAs/GaAs quantum dot solar cells (QDSC) at two different doping concentrations. An increased energy conversion efficiency of 8.91 % was obtained for the modulation doped device compared to 6.95 % of the undoped sample due to the additional electron population in the active structure.

AB - N-type silicon modulation doping was introduced into the barrier layers of InGaAs/GaAs quantum dot solar cells (QDSC) at two different doping concentrations. An increased energy conversion efficiency of 8.91 % was obtained for the modulation doped device compared to 6.95 % of the undoped sample due to the additional electron population in the active structure.

UR - http://www.scopus.com/inward/record.url?scp=84875628943&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2012.6472393

DO - 10.1109/COMMAD.2012.6472393

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 127

EP - 128

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Lu HF, Fu L, Jolley G, Tan HH , Jagadish C. Improved performance of InGaAs/GaAs quantum dot solar cells using Si-modulation doping. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 127-128. 6472393. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472393

Improved performance of InGaAs/GaAs quantum dot solar cells using Si-modulation doping

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