Improved phase-change characteristics of Zn-doped amorphous Sb 7Te3 films for high-speed and low-power phase change memory

Guoxiang Wang; Xiang Shen; Qiuhua Nie; R. P. Wang; Liangcai Wu; Yegang Lu; Shixun Dai; Tiefeng Xu; Yimin Chen

doi:10.1063/1.4816062

Improved phase-change characteristics of Zn-doped amorphous Sb ₇Te₃ films for high-speed and low-power phase change memory

Guoxiang Wang, Xiang Shen, Qiuhua Nie, R. P. Wang, Liangcai Wu, Yegang Lu, Shixun Dai, Tiefeng Xu, Yimin Chen

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

The superior performance of Zn-doped Sb₇Te₃ films might be favorable for the application in phase change memory. It was found that Zn dopants were able to suppress phase separation and form single stable Sb₂Te crystal grain, diminish the grain size, and enhance the amorphous thermal stability of Sb₇Te₃ film. Especially, Zn_30.19(Sb₇Te₃)_69.81 film has higher crystallization temperature (∼258°C), larger crystallization activation energy (∼4.15 eV), better data retention (∼170.6°C for 10 yr), wider band gap (∼0.73 eV), and higher crystalline resistance. The minimum times for crystallization of Zn_30.19(Sb₇Te ₃)_69.81 were revealed to be as short as ∼10 ns at a given proper laser power of 70 mW.

Original language	English
Article number	031914
Journal	Applied Physics Letters
Volume	103
Issue number	3
DOIs	https://doi.org/10.1063/1.4816062
Publication status	Published - 15 Jul 2013

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title = "Improved phase-change characteristics of Zn-doped amorphous Sb 7Te3 films for high-speed and low-power phase change memory",

abstract = "The superior performance of Zn-doped Sb7Te3 films might be favorable for the application in phase change memory. It was found that Zn dopants were able to suppress phase separation and form single stable Sb2Te crystal grain, diminish the grain size, and enhance the amorphous thermal stability of Sb7Te3 film. Especially, Zn30.19(Sb7Te3)69.81 film has higher crystallization temperature (∼258°C), larger crystallization activation energy (∼4.15 eV), better data retention (∼170.6°C for 10 yr), wider band gap (∼0.73 eV), and higher crystalline resistance. The minimum times for crystallization of Zn30.19(Sb7Te 3)69.81 were revealed to be as short as ∼10 ns at a given proper laser power of 70 mW.",

author = "Guoxiang Wang and Xiang Shen and Qiuhua Nie and Wang, {R. P.} and Liangcai Wu and Yegang Lu and Shixun Dai and Tiefeng Xu and Yimin Chen",

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T1 - Improved phase-change characteristics of Zn-doped amorphous Sb 7Te3 films for high-speed and low-power phase change memory

AU - Wang, Guoxiang

AU - Shen, Xiang

AU - Nie, Qiuhua

AU - Wang, R. P.

AU - Wu, Liangcai

AU - Lu, Yegang

AU - Dai, Shixun

AU - Xu, Tiefeng

AU - Chen, Yimin

PY - 2013/7/15

Y1 - 2013/7/15

N2 - The superior performance of Zn-doped Sb7Te3 films might be favorable for the application in phase change memory. It was found that Zn dopants were able to suppress phase separation and form single stable Sb2Te crystal grain, diminish the grain size, and enhance the amorphous thermal stability of Sb7Te3 film. Especially, Zn30.19(Sb7Te3)69.81 film has higher crystallization temperature (∼258°C), larger crystallization activation energy (∼4.15 eV), better data retention (∼170.6°C for 10 yr), wider band gap (∼0.73 eV), and higher crystalline resistance. The minimum times for crystallization of Zn30.19(Sb7Te 3)69.81 were revealed to be as short as ∼10 ns at a given proper laser power of 70 mW.

AB - The superior performance of Zn-doped Sb7Te3 films might be favorable for the application in phase change memory. It was found that Zn dopants were able to suppress phase separation and form single stable Sb2Te crystal grain, diminish the grain size, and enhance the amorphous thermal stability of Sb7Te3 film. Especially, Zn30.19(Sb7Te3)69.81 film has higher crystallization temperature (∼258°C), larger crystallization activation energy (∼4.15 eV), better data retention (∼170.6°C for 10 yr), wider band gap (∼0.73 eV), and higher crystalline resistance. The minimum times for crystallization of Zn30.19(Sb7Te 3)69.81 were revealed to be as short as ∼10 ns at a given proper laser power of 70 mW.

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Improved phase-change characteristics of Zn-doped amorphous Sb ₇Te₃ films for high-speed and low-power phase change memory

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