Improved thermal and electrical properties of Al-doped Ge 2Sb 2Te 5 films for phase-change random access memory

Guoxiang Wang, Xiang Shen, Qiuhua Nie*, Rongping Wang, Liangcai Wu, Yegang Lv, Fen Chen, Jing Fu, Shixun Dai, Jun Li

*Corresponding author for this work

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