TY - JOUR
T1 - Improvement in semiconductor laser printing using a sacrificial protecting layer for organic thin-film transistors fabrication
AU - Rapp, Ludovic
AU - Cibert, Christophe
AU - Nénon, Sébastien
AU - Alloncle, Anne Patricia
AU - Nagel, Matthias
AU - Lippert, Thomas
AU - Videlot-Ackermann, Christine
AU - Fages, Frédéric
AU - Delaporte, Philippe
PY - 2011/4/1
Y1 - 2011/4/1
N2 - Laser-induced forward transfer (LIFT) has been used to deposit pixels of an organic semiconductor, distyryl-quaterthiophenes (DS4T). The dynamics of the process have been investigated by shadowgraphic imaging for the nanosecond (ns) and picosecond (ps) regime on a time-scale from the laser iradiation to 1.5 μs. The morphology of the deposit has been studied for different conditions. Intermediate sacrificial layer of gold or triazene polymer has been used to trap the incident radiation. Its role is to protect the layer to be transferred from direct irradiation and to provide a mechanical impulse strong enough to eject the material.
AB - Laser-induced forward transfer (LIFT) has been used to deposit pixels of an organic semiconductor, distyryl-quaterthiophenes (DS4T). The dynamics of the process have been investigated by shadowgraphic imaging for the nanosecond (ns) and picosecond (ps) regime on a time-scale from the laser iradiation to 1.5 μs. The morphology of the deposit has been studied for different conditions. Intermediate sacrificial layer of gold or triazene polymer has been used to trap the incident radiation. Its role is to protect the layer to be transferred from direct irradiation and to provide a mechanical impulse strong enough to eject the material.
KW - Laser-induced forward transfer
KW - Nanosecond
KW - Organic semiconductor
KW - Picosecond
KW - Shadowgraphic visualizations
UR - http://www.scopus.com/inward/record.url?scp=79952314540&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2010.10.147
DO - 10.1016/j.apsusc.2010.10.147
M3 - Article
AN - SCOPUS:79952314540
SN - 0169-4332
VL - 257
SP - 5245
EP - 5249
JO - Applied Surface Science
JF - Applied Surface Science
IS - 12
ER -