Improvement in semiconductor laser printing using a sacrificial protecting layer for organic thin-film transistors fabrication

Ludovic Rapp*, Christophe Cibert, Sébastien Nénon, Anne Patricia Alloncle, Matthias Nagel, Thomas Lippert, Christine Videlot-Ackermann, Frédéric Fages, Philippe Delaporte

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Laser-induced forward transfer (LIFT) has been used to deposit pixels of an organic semiconductor, distyryl-quaterthiophenes (DS4T). The dynamics of the process have been investigated by shadowgraphic imaging for the nanosecond (ns) and picosecond (ps) regime on a time-scale from the laser iradiation to 1.5 μs. The morphology of the deposit has been studied for different conditions. Intermediate sacrificial layer of gold or triazene polymer has been used to trap the incident radiation. Its role is to protect the layer to be transferred from direct irradiation and to provide a mechanical impulse strong enough to eject the material.

Original languageEnglish
Pages (from-to)5245-5249
Number of pages5
JournalApplied Surface Science
Volume257
Issue number12
DOIs
Publication statusPublished - 1 Apr 2011
Externally publishedYes

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