Improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes

M. Buda; H. H. Tan; L. Fu; L. Josyula; C. Jagadish

doi:10.1109/COMMAD.2002.1237180

Improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes

M. Buda, H. H. Tan, L. Fu, L. Josyula, C. Jagadish

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper demonstrates the improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes. Results show that when the thickness of the insulator layer is reduced below 200 nm and Ti/Pt/Au is used as the p-type metallization, significant absorption outside the ridge occurs as a result of the penetration of the vertical optical field into the absorptive metal layers. This effect can be used to introduce selective loss for the first order lateral mode. Hence, this study has shown that the kink-free operation can be improved by 30 to 50% in 980 nm emitting laser diodes when the thickness of the SiO₂ insulator is reduced to 50 to 75 nm.

Original language	English
Title of host publication	2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
Editors	Michael Gal
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	25-28
Number of pages	4
ISBN (Electronic)	0780375718
DOIs	https://doi.org/10.1109/COMMAD.2002.1237180
Publication status	Published - 2002
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia Duration: 11 Dec 2002 → 13 Dec 2002

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume	2002-January

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Country/Territory	Australia
City	Sydney
Period	11/12/02 → 13/12/02

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10.1109/COMMAD.2002.1237180

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Buda, M., Tan, H. H., Fu, L., Josyula, L., & Jagadish, C. (2002). Improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes. In M. Gal (Ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings (pp. 25-28). Article 1237180 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2002.1237180

Buda, M. ; Tan, H. H. ; Fu, L. et al. / Improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes. 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. editor / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 25-28 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

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title = "Improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes",

abstract = "This paper demonstrates the improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes. Results show that when the thickness of the insulator layer is reduced below 200 nm and Ti/Pt/Au is used as the p-type metallization, significant absorption outside the ridge occurs as a result of the penetration of the vertical optical field into the absorptive metal layers. This effect can be used to introduce selective loss for the first order lateral mode. Hence, this study has shown that the kink-free operation can be improved by 30 to 50% in 980 nm emitting laser diodes when the thickness of the SiO2 insulator is reduced to 50 to 75 nm.",

author = "M. Buda and Tan, {H. H.} and L. Fu and L. Josyula and C. Jagadish",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 ; Conference date: 11-12-2002 Through 13-12-2002",

year = "2002",

doi = "10.1109/COMMAD.2002.1237180",

language = "English",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Buda, M, Tan, HH , Fu, L, Josyula, L & Jagadish, C 2002, Improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes. in M Gal (ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings., 1237180, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 25-28, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 11/12/02. https://doi.org/10.1109/COMMAD.2002.1237180

Improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes. / Buda, M.; Tan, H. H.; Fu, L. et al.
2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. ed. / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. p. 25-28 1237180 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes

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AU - Jagadish, C.

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N2 - This paper demonstrates the improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes. Results show that when the thickness of the insulator layer is reduced below 200 nm and Ti/Pt/Au is used as the p-type metallization, significant absorption outside the ridge occurs as a result of the penetration of the vertical optical field into the absorptive metal layers. This effect can be used to introduce selective loss for the first order lateral mode. Hence, this study has shown that the kink-free operation can be improved by 30 to 50% in 980 nm emitting laser diodes when the thickness of the SiO2 insulator is reduced to 50 to 75 nm.

AB - This paper demonstrates the improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes. Results show that when the thickness of the insulator layer is reduced below 200 nm and Ti/Pt/Au is used as the p-type metallization, significant absorption outside the ridge occurs as a result of the penetration of the vertical optical field into the absorptive metal layers. This effect can be used to introduce selective loss for the first order lateral mode. Hence, this study has shown that the kink-free operation can be improved by 30 to 50% in 980 nm emitting laser diodes when the thickness of the SiO2 insulator is reduced to 50 to 75 nm.

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BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings

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Buda M, Tan HH , Fu L, Josyula L, Jagadish C. Improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes. In Gal M, editor, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 25-28. 1237180. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2002.1237180

Improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes

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