@inproceedings{613cfb0b85ee4db38697f2e5a8e5622a,
title = "Improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes",
abstract = "This paper demonstrates the improvement of kink-free operation in InGaAs/GaAs/AlGaAs high power, ridge waveguide laser diodes. Results show that when the thickness of the insulator layer is reduced below 200 nm and Ti/Pt/Au is used as the p-type metallization, significant absorption outside the ridge occurs as a result of the penetration of the vertical optical field into the absorptive metal layers. This effect can be used to introduce selective loss for the first order lateral mode. Hence, this study has shown that the kink-free operation can be improved by 30 to 50\% in 980 nm emitting laser diodes when the thickness of the SiO2 insulator is reduced to 50 to 75 nm.",
author = "M. Buda and Tan, \{H. H.\} and L. Fu and L. Josyula and C. Jagadish",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 ; Conference date: 11-12-2002 Through 13-12-2002",
year = "2002",
doi = "10.1109/COMMAD.2002.1237180",
language = "English",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "25--28",
editor = "Michael Gal",
booktitle = "2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings",
address = "United States",
}