Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires

N. Jiang; P. Parkinson; Q. Gao; J. Wong-Leung; S. Breuer; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2012.6472346

Improvement of minority carrier lifetime in GaAs/Al_xGa _1-xAs core-shell nanowires

N. Jiang^*, P. Parkinson, Q. Gao, J. Wong-Leung, S. Breuer, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

GaAs/Al_xGa_1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-catalysed GaAs cores. Cross-section transmission electron microscope bright field images show that the tapering at bottom of the nanowires is mainly caused by GaAs cap growth. Time-resolved photo-luminescence measurements of single nanowires were taken at room temperature and a minority carrier lifetime of (1.02±0.43) ns was obtained for single nanowires with Al_xGa_1-xAs shell grown at 750°C. A close correlation between the shell growth temperature and minority carrier lifetime has also been observed.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	33-34
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472346
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

Access to Document

10.1109/COMMAD.2012.6472346

Cite this

Jiang, N., Parkinson, P., Gao, Q., Wong-Leung, J., Breuer, S., Tan, H. H., & Jagadish, C. (2012). Improvement of minority carrier lifetime in GaAs/Al_xGa _1-xAs core-shell nanowires. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 33-34). Article 6472346 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472346

@inproceedings{f2c766793763420ba7daa32ae25341ce,

title = "Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires",

abstract = "GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-catalysed GaAs cores. Cross-section transmission electron microscope bright field images show that the tapering at bottom of the nanowires is mainly caused by GaAs cap growth. Time-resolved photo-luminescence measurements of single nanowires were taken at room temperature and a minority carrier lifetime of (1.02±0.43) ns was obtained for single nanowires with AlxGa1-xAs shell grown at 750°C. A close correlation between the shell growth temperature and minority carrier lifetime has also been observed.",

author = "N. Jiang and P. Parkinson and Q. Gao and J. Wong-Leung and S. Breuer and Tan, {H. H.} and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472346",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "33--34",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Jiang, N, Parkinson, P, Gao, Q, Wong-Leung, J, Breuer, S, Tan, HH & Jagadish, C 2012, Improvement of minority carrier lifetime in GaAs/Al_xGa _1-xAs core-shell nanowires. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472346, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 33-34, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472346

Improvement of minority carrier lifetime in GaAs/Al_xGa _1-xAs core-shell nanowires. / Jiang, N.; Parkinson, P.; Gao, Q. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 33-34 6472346 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Tan, H. H.

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AB - GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-catalysed GaAs cores. Cross-section transmission electron microscope bright field images show that the tapering at bottom of the nanowires is mainly caused by GaAs cap growth. Time-resolved photo-luminescence measurements of single nanowires were taken at room temperature and a minority carrier lifetime of (1.02±0.43) ns was obtained for single nanowires with AlxGa1-xAs shell grown at 750°C. A close correlation between the shell growth temperature and minority carrier lifetime has also been observed.

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Jiang N, Parkinson P, Gao Q, Wong-Leung J, Breuer S, Tan HH et al. Improvement of minority carrier lifetime in GaAs/Al_xGa _1-xAs core-shell nanowires. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 33-34. 6472346. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472346