Improvement of the Kink-Free Operation in Ridge-Waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge

M. Buda; H. H. Tan; L. Fu; L. Josyula; C. Jagadish

doi:10.1109/LPT.2003.819756

Improvement of the Kink-Free Operation in Ridge-Waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge

M. Buda^*, H. H. Tan, L. Fu, L. Josyula, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

The kink-free output power in 980-nm emitting laser diodes can be increased by 30%-50% in ridge-waveguide devices when the thickness of the oxide is decreased such that the optical field is allowed to interact with the lossy Ti-PtAu metallization outside the ridge. This provides selective loss for the first-order lateral mode and delays the onset of the beam steering associated with kinks in the power output - current characteristic. The method is very simple and can be applied for any kind of ridge-waveguide semiconductor laser diode device.

Original language	English
Pages (from-to)	1686-1688
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	15
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2003.819756
Publication status	Published - Dec 2003

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title = "Improvement of the Kink-Free Operation in Ridge-Waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge",

abstract = "The kink-free output power in 980-nm emitting laser diodes can be increased by 30%-50% in ridge-waveguide devices when the thickness of the oxide is decreased such that the optical field is allowed to interact with the lossy Ti-PtAu metallization outside the ridge. This provides selective loss for the first-order lateral mode and delays the onset of the beam steering associated with kinks in the power output - current characteristic. The method is very simple and can be applied for any kind of ridge-waveguide semiconductor laser diode device.",

keywords = "High-power diode lasers, Semiconductor lasers, Single-mode semiconductor lasers",

author = "M. Buda and Tan, {H. H.} and L. Fu and L. Josyula and C. Jagadish",

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AU - Buda, M.

AU - Tan, H. H.

AU - Fu, L.

AU - Josyula, L.

AU - Jagadish, C.

PY - 2003/12

Y1 - 2003/12

N2 - The kink-free output power in 980-nm emitting laser diodes can be increased by 30%-50% in ridge-waveguide devices when the thickness of the oxide is decreased such that the optical field is allowed to interact with the lossy Ti-PtAu metallization outside the ridge. This provides selective loss for the first-order lateral mode and delays the onset of the beam steering associated with kinks in the power output - current characteristic. The method is very simple and can be applied for any kind of ridge-waveguide semiconductor laser diode device.

AB - The kink-free output power in 980-nm emitting laser diodes can be increased by 30%-50% in ridge-waveguide devices when the thickness of the oxide is decreased such that the optical field is allowed to interact with the lossy Ti-PtAu metallization outside the ridge. This provides selective loss for the first-order lateral mode and delays the onset of the beam steering associated with kinks in the power output - current characteristic. The method is very simple and can be applied for any kind of ridge-waveguide semiconductor laser diode device.

KW - High-power diode lasers

KW - Semiconductor lasers

KW - Single-mode semiconductor lasers

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

Improvement of the Kink-Free Operation in Ridge-Waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge

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