Impurities in solar-grade silicon

D. Macdonald; J. Tan

doi:10.1117/12.753494

Impurities in solar-grade silicon

D. Macdonald^*, J. Tan

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Citations (Scopus)

Abstract

Unintentional impurities can play a significant role in reducing the efficiency of crystalline silicon solar cells. With the advent of low-cost solar-grade silicon feedstocks, this is likely to remain the case well into the future. The purpose of this paper is to review the most important impurities in directionally-solidified ingot-grown multicrystalline silicon, their chemical states, where they come from, and the most commonly used techniques to detect them.

Original language	English
Title of host publication	Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV
DOIs	https://doi.org/10.1117/12.753494
Publication status	Published - 2008
Event	Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV - Canberra, Australia Duration: 5 Dec 2007 → 7 Dec 2007

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6800
ISSN (Print)	0277-786X

Conference

Conference	Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV
Country/Territory	Australia
City	Canberra
Period	5/12/07 → 7/12/07

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10.1117/12.753494

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title = "Impurities in solar-grade silicon",

abstract = "Unintentional impurities can play a significant role in reducing the efficiency of crystalline silicon solar cells. With the advent of low-cost solar-grade silicon feedstocks, this is likely to remain the case well into the future. The purpose of this paper is to review the most important impurities in directionally-solidified ingot-grown multicrystalline silicon, their chemical states, where they come from, and the most commonly used techniques to detect them.",

keywords = "Metallic impurities, Photovoltaics, Silicon",

author = "D. Macdonald and J. Tan",

year = "2008",

doi = "10.1117/12.753494",

language = "English",

isbn = "9780819469717",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV",

note = "Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV ; Conference date: 05-12-2007 Through 07-12-2007",

}

Macdonald, D & Tan, J 2008, Impurities in solar-grade silicon. in Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV., 68000X, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, Canberra, Australia, 5/12/07. https://doi.org/10.1117/12.753494

TY - GEN

T1 - Impurities in solar-grade silicon

AU - Macdonald, D.

AU - Tan, J.

PY - 2008

Y1 - 2008

N2 - Unintentional impurities can play a significant role in reducing the efficiency of crystalline silicon solar cells. With the advent of low-cost solar-grade silicon feedstocks, this is likely to remain the case well into the future. The purpose of this paper is to review the most important impurities in directionally-solidified ingot-grown multicrystalline silicon, their chemical states, where they come from, and the most commonly used techniques to detect them.

AB - Unintentional impurities can play a significant role in reducing the efficiency of crystalline silicon solar cells. With the advent of low-cost solar-grade silicon feedstocks, this is likely to remain the case well into the future. The purpose of this paper is to review the most important impurities in directionally-solidified ingot-grown multicrystalline silicon, their chemical states, where they come from, and the most commonly used techniques to detect them.

KW - Metallic impurities

KW - Photovoltaics

KW - Silicon

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U2 - 10.1117/12.753494

DO - 10.1117/12.753494

M3 - Conference contribution

SN - 9780819469717

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV

T2 - Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV

Y2 - 5 December 2007 through 7 December 2007

ER -

Impurities in solar-grade silicon

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