Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers

Prakash N.K. Deenapanray; Bin Gong; R. N. Lamb; A. Martin; L. Fu; H. H. Tan; C. Jagadish

doi:10.1063/1.1484244

Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers

Prakash N.K. Deenapanray, Bin Gong, R. N. Lamb, A. Martin, L. Fu, H. H. Tan, C. Jagadish

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17 Citations (Scopus)

Abstract

We have used photoluminescence, deep level transient spectroscopy and x-ray photoelectron spectroscopy to investigate the mechanisms of impurity-free disordering in GaAs-based structures using doped spin-on silica layers. We demonstrate that V_Ga is efficiently converted into arsenic-antisite, As_Ga, related defects (EL2-type defects) when the GaAs layer is under compressive stress. We propose that the efficient formation of EL2-type defects reduces the efficiency of impurity-free interdiffusion of GaAs/AlGaAs quantum wells.

Original language	English
Pages (from-to)	4351-4353
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	23
DOIs	https://doi.org/10.1063/1.1484244
Publication status	Published - 10 Jun 2002

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abstract = "We have used photoluminescence, deep level transient spectroscopy and x-ray photoelectron spectroscopy to investigate the mechanisms of impurity-free disordering in GaAs-based structures using doped spin-on silica layers. We demonstrate that VGa is efficiently converted into arsenic-antisite, AsGa, related defects (EL2-type defects) when the GaAs layer is under compressive stress. We propose that the efficient formation of EL2-type defects reduces the efficiency of impurity-free interdiffusion of GaAs/AlGaAs quantum wells.",

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AU - Deenapanray, Prakash N.K.

AU - Gong, Bin

AU - Lamb, R. N.

AU - Martin, A.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2002/6/10

Y1 - 2002/6/10

N2 - We have used photoluminescence, deep level transient spectroscopy and x-ray photoelectron spectroscopy to investigate the mechanisms of impurity-free disordering in GaAs-based structures using doped spin-on silica layers. We demonstrate that VGa is efficiently converted into arsenic-antisite, AsGa, related defects (EL2-type defects) when the GaAs layer is under compressive stress. We propose that the efficient formation of EL2-type defects reduces the efficiency of impurity-free interdiffusion of GaAs/AlGaAs quantum wells.

AB - We have used photoluminescence, deep level transient spectroscopy and x-ray photoelectron spectroscopy to investigate the mechanisms of impurity-free disordering in GaAs-based structures using doped spin-on silica layers. We demonstrate that VGa is efficiently converted into arsenic-antisite, AsGa, related defects (EL2-type defects) when the GaAs layer is under compressive stress. We propose that the efficient formation of EL2-type defects reduces the efficiency of impurity-free interdiffusion of GaAs/AlGaAs quantum wells.

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U2 - 10.1063/1.1484244

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SP - 4351

EP - 4353

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers

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