Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers

Prakash N.K. Deenapanray; Bin Gong; R. N. Lamb; A. Martin; L. Fu; H. H. Tan; C. Jagadish

doi:10.1063/1.1484244

Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers

Prakash N.K. Deenapanray
, Bin Gong
, R. N. Lamb
, A. Martin
, L. Fu
, H. H. Tan
, C. Jagadish

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We have used photoluminescence, deep level transient spectroscopy and x-ray photoelectron spectroscopy to investigate the mechanisms of impurity-free disordering in GaAs-based structures using doped spin-on silica layers. We demonstrate that V_Ga is efficiently converted into arsenic-antisite, As_Ga, related defects (EL2-type defects) when the GaAs layer is under compressive stress. We propose that the efficient formation of EL2-type defects reduces the efficiency of impurity-free interdiffusion of GaAs/AlGaAs quantum wells.

Original language	English
Pages (from-to)	4351-4353
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	23
DOIs	https://doi.org/10.1063/1.1484244
Publication status	Published - 10 Jun 2002

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@article{8ea6983059d2460e97ab25601c06d1e1,

title = "Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers",

abstract = "We have used photoluminescence, deep level transient spectroscopy and x-ray photoelectron spectroscopy to investigate the mechanisms of impurity-free disordering in GaAs-based structures using doped spin-on silica layers. We demonstrate that VGa is efficiently converted into arsenic-antisite, AsGa, related defects (EL2-type defects) when the GaAs layer is under compressive stress. We propose that the efficient formation of EL2-type defects reduces the efficiency of impurity-free interdiffusion of GaAs/AlGaAs quantum wells.",

author = "Deenapanray, \{Prakash N.K.\} and Bin Gong and Lamb, \{R. N.\} and A. Martin and L. Fu and Tan, \{H. H.\} and C. Jagadish",

year = "2002",

month = jun,

day = "10",

doi = "10.1063/1.1484244",

language = "English",

volume = "80",

pages = "4351--4353",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers

AU - Deenapanray, Prakash N.K.

AU - Gong, Bin

AU - Lamb, R. N.

AU - Martin, A.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2002/6/10

Y1 - 2002/6/10

N2 - We have used photoluminescence, deep level transient spectroscopy and x-ray photoelectron spectroscopy to investigate the mechanisms of impurity-free disordering in GaAs-based structures using doped spin-on silica layers. We demonstrate that VGa is efficiently converted into arsenic-antisite, AsGa, related defects (EL2-type defects) when the GaAs layer is under compressive stress. We propose that the efficient formation of EL2-type defects reduces the efficiency of impurity-free interdiffusion of GaAs/AlGaAs quantum wells.

AB - We have used photoluminescence, deep level transient spectroscopy and x-ray photoelectron spectroscopy to investigate the mechanisms of impurity-free disordering in GaAs-based structures using doped spin-on silica layers. We demonstrate that VGa is efficiently converted into arsenic-antisite, AsGa, related defects (EL2-type defects) when the GaAs layer is under compressive stress. We propose that the efficient formation of EL2-type defects reduces the efficiency of impurity-free interdiffusion of GaAs/AlGaAs quantum wells.

UR - https://www.scopus.com/pages/publications/79956003212

U2 - 10.1063/1.1484244

DO - 10.1063/1.1484244

M3 - Article

SN - 0003-6951

VL - 80

SP - 4351

EP - 4353

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers

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