Impurity free vacancy disordering of InGaAs quantum dots

P. Lever; H. H. Tan; C. Jagadish

doi:10.1063/1.1803948

Impurity free vacancy disordering of InGaAs quantum dots

P. Lever^*, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The effect of thermal interdiffusion on In(Ga)As/GaAs quantum dot structures is very significant, due to the large strain and high concentration of indium within the dots. The traditional high temperature annealing conditions used in impurity free vacancy disordering of quantum wells cannot be used for quantum dots, as the dots can be destroyed at these temperatures. However, additional shifts due to capping layers can be achieved at low annealing temperatures. Spin-on-glass, plasma enhanced chemical vapor deposited SiO ₂, Si₃N₄, and electron-beam evaporated TiO ₂ layers are used to both enhance and suppress the interdiffusion in single and stacked quantum dot structures. After annealing at only 750°C the different cappings enable a shift in band gap energy of 100 meV to be obtained across the sample.

Original language	English
Article number	5
Pages (from-to)	7544-7548
Number of pages	5
Journal	Journal of Applied Physics
Volume	96
Issue number	12
DOIs	https://doi.org/10.1063/1.1803948
Publication status	Published - 15 Dec 2004
Externally published	Yes

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title = "Impurity free vacancy disordering of InGaAs quantum dots",

abstract = "The effect of thermal interdiffusion on In(Ga)As/GaAs quantum dot structures is very significant, due to the large strain and high concentration of indium within the dots. The traditional high temperature annealing conditions used in impurity free vacancy disordering of quantum wells cannot be used for quantum dots, as the dots can be destroyed at these temperatures. However, additional shifts due to capping layers can be achieved at low annealing temperatures. Spin-on-glass, plasma enhanced chemical vapor deposited SiO 2, Si3N4, and electron-beam evaporated TiO 2 layers are used to both enhance and suppress the interdiffusion in single and stacked quantum dot structures. After annealing at only 750°C the different cappings enable a shift in band gap energy of 100 meV to be obtained across the sample.",

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AU - Jagadish, C.

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N2 - The effect of thermal interdiffusion on In(Ga)As/GaAs quantum dot structures is very significant, due to the large strain and high concentration of indium within the dots. The traditional high temperature annealing conditions used in impurity free vacancy disordering of quantum wells cannot be used for quantum dots, as the dots can be destroyed at these temperatures. However, additional shifts due to capping layers can be achieved at low annealing temperatures. Spin-on-glass, plasma enhanced chemical vapor deposited SiO 2, Si3N4, and electron-beam evaporated TiO 2 layers are used to both enhance and suppress the interdiffusion in single and stacked quantum dot structures. After annealing at only 750°C the different cappings enable a shift in band gap energy of 100 meV to be obtained across the sample.

AB - The effect of thermal interdiffusion on In(Ga)As/GaAs quantum dot structures is very significant, due to the large strain and high concentration of indium within the dots. The traditional high temperature annealing conditions used in impurity free vacancy disordering of quantum wells cannot be used for quantum dots, as the dots can be destroyed at these temperatures. However, additional shifts due to capping layers can be achieved at low annealing temperatures. Spin-on-glass, plasma enhanced chemical vapor deposited SiO 2, Si3N4, and electron-beam evaporated TiO 2 layers are used to both enhance and suppress the interdiffusion in single and stacked quantum dot structures. After annealing at only 750°C the different cappings enable a shift in band gap energy of 100 meV to be obtained across the sample.

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Impurity free vacancy disordering of InGaAs quantum dots

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