Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cells

Anyao Liu; Di Yan; Jennifer Wong-Leung; Li Li; Sieu Pheng Phang; Andres Cuevas; Daniel MacDonald

doi:10.1109/PVSC.2018.8547431

Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cells

Anyao Liu, Di Yan, Jennifer Wong-Leung, Li Li, Sieu Pheng Phang, Andres Cuevas, Daniel MacDonald

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

We report direct experimental evidence for the strong impurity gettering effects associated with the formation of diffusion-doped polysilicon passivating contacts. Iron is used as a marker impurity in silicon to quantify the gettering effectiveness. By monitoring the iron redistribution from the silicon wafer bulk to the polysilicon surface layers, via a combination of carrier lifetime, secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM) techniques, the respective gettering sites in the phosphorus and boron diffusiondoped polysilicon contacts are identified. In phosphorus-doped polysilicon, iron moves to the heavily doped polysilicon layer; and in the boron-doped structure, iron is gettered to the boron-rich layer. Both gettering processes occur via an impurity segregation mechanism. Lastly, the gettering of iron to the polysilicon surface layers is found to have no impact on the passivation quality of the polysilicon contacts.

Original language	English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1667-1671
Number of pages	5
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8547431
Publication status	Published - 26 Nov 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18

Access to Document

10.1109/PVSC.2018.8547431

Cite this

Liu, A., Yan, D., Wong-Leung, J., Li, L., Phang, S. P., Cuevas, A., & MacDonald, D. (2018). Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 1667-1671). Article 8547431 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547431

Liu, Anyao ; Yan, Di ; Wong-Leung, Jennifer et al. / Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cells. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1667-1671 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

@inproceedings{a2ae91c090c94e3ca3d713cf11cb12bc,

title = "Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cells",

abstract = "We report direct experimental evidence for the strong impurity gettering effects associated with the formation of diffusion-doped polysilicon passivating contacts. Iron is used as a marker impurity in silicon to quantify the gettering effectiveness. By monitoring the iron redistribution from the silicon wafer bulk to the polysilicon surface layers, via a combination of carrier lifetime, secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM) techniques, the respective gettering sites in the phosphorus and boron diffusiondoped polysilicon contacts are identified. In phosphorus-doped polysilicon, iron moves to the heavily doped polysilicon layer; and in the boron-doped structure, iron is gettered to the boron-rich layer. Both gettering processes occur via an impurity segregation mechanism. Lastly, the gettering of iron to the polysilicon surface layers is found to have no impact on the passivation quality of the polysilicon contacts.",

keywords = "gettering, iron, passivating contact, polysilicon, silicon solar cells",

author = "Anyao Liu and Di Yan and Jennifer Wong-Leung and Li Li and Phang, {Sieu Pheng} and Andres Cuevas and Daniel MacDonald",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

year = "2018",

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doi = "10.1109/PVSC.2018.8547431",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

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Liu, A, Yan, D, Wong-Leung, J, Li, L, Phang, SP, Cuevas, A & MacDonald, D 2018, Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cells. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547431, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers Inc., pp. 1667-1671, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10/06/18. https://doi.org/10.1109/PVSC.2018.8547431

Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cells. / Liu, Anyao; Yan, Di; Wong-Leung, Jennifer et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1667-1671 8547431 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cells

AU - Liu, Anyao

AU - Yan, Di

AU - Wong-Leung, Jennifer

AU - Li, Li

AU - Phang, Sieu Pheng

AU - Cuevas, Andres

AU - MacDonald, Daniel

PY - 2018/11/26

Y1 - 2018/11/26

N2 - We report direct experimental evidence for the strong impurity gettering effects associated with the formation of diffusion-doped polysilicon passivating contacts. Iron is used as a marker impurity in silicon to quantify the gettering effectiveness. By monitoring the iron redistribution from the silicon wafer bulk to the polysilicon surface layers, via a combination of carrier lifetime, secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM) techniques, the respective gettering sites in the phosphorus and boron diffusiondoped polysilicon contacts are identified. In phosphorus-doped polysilicon, iron moves to the heavily doped polysilicon layer; and in the boron-doped structure, iron is gettered to the boron-rich layer. Both gettering processes occur via an impurity segregation mechanism. Lastly, the gettering of iron to the polysilicon surface layers is found to have no impact on the passivation quality of the polysilicon contacts.

AB - We report direct experimental evidence for the strong impurity gettering effects associated with the formation of diffusion-doped polysilicon passivating contacts. Iron is used as a marker impurity in silicon to quantify the gettering effectiveness. By monitoring the iron redistribution from the silicon wafer bulk to the polysilicon surface layers, via a combination of carrier lifetime, secondary ion mass spectrometry (SIMS), and transmission electron microscopy (TEM) techniques, the respective gettering sites in the phosphorus and boron diffusiondoped polysilicon contacts are identified. In phosphorus-doped polysilicon, iron moves to the heavily doped polysilicon layer; and in the boron-doped structure, iron is gettered to the boron-rich layer. Both gettering processes occur via an impurity segregation mechanism. Lastly, the gettering of iron to the polysilicon surface layers is found to have no impact on the passivation quality of the polysilicon contacts.

KW - gettering

KW - iron

KW - passivating contact

KW - polysilicon

KW - silicon solar cells

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U2 - 10.1109/PVSC.2018.8547431

DO - 10.1109/PVSC.2018.8547431

M3 - Conference contribution

T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

SP - 1667

EP - 1671

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

Liu A, Yan D, Wong-Leung J, Li L, Phang SP, Cuevas A et al. Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1667-1671. 8547431. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8547431

Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cells

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