@inproceedings{ce126767188b4deabef118bf106f0cbe,
title = "Impurity gettering by silicon nitride films: kinetics, mechanisms and simulation",
abstract = "The mechanisms behind the gettering effect of silicon nitride films for removing iron impurities in silicon are investigated in this study. The silicon nitride films are from plasma-enhanced chemical vapor deposition (PECVD). By monitoring the iron reduction kinetics in the silicon wafer bulk during cumulative anneals, it is found that silicon nitride gettering takes place mainly via a segregation mechanism with an activation energy of 0.9±0.1 eV for the investigated PECVD silicon nitride film.",
keywords = "activation energy, gettering, iron, segregation, silicon nitride",
author = "Le, \{Tien Trong\} and Ziv Hameiri and Daniel MacDonald and Liu, \{An Yao\}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 ; Conference date: 20-06-2021 Through 25-06-2021",
year = "2021",
month = jun,
day = "20",
doi = "10.1109/PVSC43889.2021.9518614",
language = "English",
isbn = "978-1-6654-3018-0",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "664--665",
booktitle = "2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), Fort Lauderdale, FL, USA",
address = "United States",
}