Impurity-stimulated crystallization and diffusion in amorphous silicon

E. Nygren; A. P. Pogany; K. T. Short; J. S. Williams; R. G. Elliman; J. M. Poate

doi:10.1063/1.99436

Impurity-stimulated crystallization and diffusion in amorphous silicon

E. Nygren^*, A. P. Pogany, K. T. Short, J. S. Williams, R. G. Elliman, J. M. Poate

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

An amorphous-to-polycrystalline silicon transformation and concomitant In redistribution have been observed in In-implanted silicon at temperatures well below those at which solid phase epitaxial growth or random crystallization is observed in undoped films. The process is extremely rapid and exhibits a strong dependence on both In concentration and temperature. It is proposed that the In redistribution and accompanying silicon crystallization are mediated by molten, In-rich precipitates in amorphous silicon.

Original language	English
Pages (from-to)	439-441
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	6
DOIs	https://doi.org/10.1063/1.99436
Publication status	Published - 1988
Externally published	Yes

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title = "Impurity-stimulated crystallization and diffusion in amorphous silicon",

abstract = "An amorphous-to-polycrystalline silicon transformation and concomitant In redistribution have been observed in In-implanted silicon at temperatures well below those at which solid phase epitaxial growth or random crystallization is observed in undoped films. The process is extremely rapid and exhibits a strong dependence on both In concentration and temperature. It is proposed that the In redistribution and accompanying silicon crystallization are mediated by molten, In-rich precipitates in amorphous silicon.",

author = "E. Nygren and Pogany, {A. P.} and Short, {K. T.} and Williams, {J. S.} and Elliman, {R. G.} and Poate, {J. M.}",

year = "1988",

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language = "English",

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pages = "439--441",

journal = "Applied Physics Letters",

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AU - Nygren, E.

AU - Pogany, A. P.

AU - Short, K. T.

AU - Williams, J. S.

AU - Elliman, R. G.

AU - Poate, J. M.

PY - 1988

Y1 - 1988

N2 - An amorphous-to-polycrystalline silicon transformation and concomitant In redistribution have been observed in In-implanted silicon at temperatures well below those at which solid phase epitaxial growth or random crystallization is observed in undoped films. The process is extremely rapid and exhibits a strong dependence on both In concentration and temperature. It is proposed that the In redistribution and accompanying silicon crystallization are mediated by molten, In-rich precipitates in amorphous silicon.

AB - An amorphous-to-polycrystalline silicon transformation and concomitant In redistribution have been observed in In-implanted silicon at temperatures well below those at which solid phase epitaxial growth or random crystallization is observed in undoped films. The process is extremely rapid and exhibits a strong dependence on both In concentration and temperature. It is proposed that the In redistribution and accompanying silicon crystallization are mediated by molten, In-rich precipitates in amorphous silicon.

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U2 - 10.1063/1.99436

DO - 10.1063/1.99436

M3 - Article

AN - SCOPUS:2042418968

SN - 0003-6951

VL - 52

SP - 439

EP - 441

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Impurity-stimulated crystallization and diffusion in amorphous silicon

Abstract

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