In situ hole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films

Hachizo Muto; Takashi Asano; Rong Ping Wang; Takeshi Kusumori

doi:10.1063/1.2105989

In situ hole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films

Hachizo Muto^*, Takashi Asano, Rong Ping Wang, Takeshi Kusumori

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Apparatus for dual-target simultaneous laser ablation deposition and in situ doping techniques have been developed to achieve p -type doping during epitaxial growth of wide-band-gap semiconductors. The apparatus has two target holders with a target-rotation mechanism and a rotation-axis adjusting mechanism to obtain homogeneously doped films. Mg-doped GaN films have been fabricated on 6H-SiC(0001) and Si(111) substrates in N H3 ambient by simultaneous ablation of GaN and Mg-metal targets using two lasers. Junctions of the films with n -type substrates show a diode curve characteristic of p-n junctions, but not for junction with p -Si, indicating hole doping without further procedures. In situ p -type doping to SiC was also achieved by using SiC and Al4 C3 targets.

Original language	English
Article number	162106
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	16
DOIs	https://doi.org/10.1063/1.2105989
Publication status	Published - 17 Oct 2005
Externally published	Yes

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title = "In situ hole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films",

abstract = "Apparatus for dual-target simultaneous laser ablation deposition and in situ doping techniques have been developed to achieve p -type doping during epitaxial growth of wide-band-gap semiconductors. The apparatus has two target holders with a target-rotation mechanism and a rotation-axis adjusting mechanism to obtain homogeneously doped films. Mg-doped GaN films have been fabricated on 6H-SiC(0001) and Si(111) substrates in N H3 ambient by simultaneous ablation of GaN and Mg-metal targets using two lasers. Junctions of the films with n -type substrates show a diode curve characteristic of p-n junctions, but not for junction with p -Si, indicating hole doping without further procedures. In situ p -type doping to SiC was also achieved by using SiC and Al4 C3 targets.",

author = "Hachizo Muto and Takashi Asano and Wang, {Rong Ping} and Takeshi Kusumori",

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T1 - In situ hole doping of wide-gap semiconductors by dual-target simultaneous laser ablation

T2 - GaN and SiC epitaxial films

AU - Muto, Hachizo

AU - Asano, Takashi

AU - Wang, Rong Ping

AU - Kusumori, Takeshi

PY - 2005/10/17

Y1 - 2005/10/17

N2 - Apparatus for dual-target simultaneous laser ablation deposition and in situ doping techniques have been developed to achieve p -type doping during epitaxial growth of wide-band-gap semiconductors. The apparatus has two target holders with a target-rotation mechanism and a rotation-axis adjusting mechanism to obtain homogeneously doped films. Mg-doped GaN films have been fabricated on 6H-SiC(0001) and Si(111) substrates in N H3 ambient by simultaneous ablation of GaN and Mg-metal targets using two lasers. Junctions of the films with n -type substrates show a diode curve characteristic of p-n junctions, but not for junction with p -Si, indicating hole doping without further procedures. In situ p -type doping to SiC was also achieved by using SiC and Al4 C3 targets.

AB - Apparatus for dual-target simultaneous laser ablation deposition and in situ doping techniques have been developed to achieve p -type doping during epitaxial growth of wide-band-gap semiconductors. The apparatus has two target holders with a target-rotation mechanism and a rotation-axis adjusting mechanism to obtain homogeneously doped films. Mg-doped GaN films have been fabricated on 6H-SiC(0001) and Si(111) substrates in N H3 ambient by simultaneous ablation of GaN and Mg-metal targets using two lasers. Junctions of the films with n -type substrates show a diode curve characteristic of p-n junctions, but not for junction with p -Si, indicating hole doping without further procedures. In situ p -type doping to SiC was also achieved by using SiC and Al4 C3 targets.

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DO - 10.1063/1.2105989

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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In situ hole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films

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