In situ measurements of the channeling dependence of ion-beam-induced recrystallization in silicon

G. De M. Azevedo*, J. S. Williams, I. M. Young, M. J. Conway, A. Kinomura

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    The crystallization rate of surface amorphous silicon layers irradiated with 7 MeV Au4+ ions has been studied for random and channeling incident beams. The movement of the amorphous/crystalline interfaces was monitored by in situ time resolved reflectivity and ex situ Rutherford backscattering spectrometry. Our experimental results reveal a clear channeling effect on the crystallization rates. Comparison of our data with calculations of the point defect distributions performed with the MARLOWE code suggests that defects produced at the amorphous crystalline interface are responsible for ion-beam-induced epitaxial crystallization.

    Original languageEnglish
    Pages (from-to)772-776
    Number of pages5
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume190
    Issue number1-4
    DOIs
    Publication statusPublished - May 2002

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