In-situ microscopy study of nanocavity shrinkage in Si under on beam irradiation

M. O. Ruault; M. C. Ridgway; F. Fortuna; H. Bernas; J. S. Williams

doi:10.1051/epjap:2002120

In-situ microscopy study of nanocavity shrinkage in Si under on beam irradiation

M. O. Ruault^*, M. C. Ridgway, F. Fortuna, H. Bernas, J. S. Williams

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report an in situ transmission electron microscopy (TEM) study of nanocavity evolution in amorphous Si (a-Si) under ion beam irradiation. The size evolution of the nanocavities was monitored during ion irradiation with Si or As at various temperatures between 300 and 600 K. A linear decrease of the nanocavity diameter was found as the ion fluence increased; it was much faster than its counterpart in crystalline Si (c-Si). Here, the shrinkage rate depended on the irradiation-induced atomic displacement rate. No significant temperature dependence was observed, confirming that the irradiation-induced nanocavity shrinkage in a-Si is essentially due to ballistic interactions, i.e., differs radically from that in c-Si.

Original language	English
Pages (from-to)	39-40
Number of pages	2
Journal	EPJ Applied Physics
Volume	23
Issue number	1
DOIs	https://doi.org/10.1051/epjap:2002120
Publication status	Published - Jul 2003

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abstract = "We report an in situ transmission electron microscopy (TEM) study of nanocavity evolution in amorphous Si (a-Si) under ion beam irradiation. The size evolution of the nanocavities was monitored during ion irradiation with Si or As at various temperatures between 300 and 600 K. A linear decrease of the nanocavity diameter was found as the ion fluence increased; it was much faster than its counterpart in crystalline Si (c-Si). Here, the shrinkage rate depended on the irradiation-induced atomic displacement rate. No significant temperature dependence was observed, confirming that the irradiation-induced nanocavity shrinkage in a-Si is essentially due to ballistic interactions, i.e., differs radically from that in c-Si.",

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AU - Ruault, M. O.

AU - Ridgway, M. C.

AU - Fortuna, F.

AU - Bernas, H.

AU - Williams, J. S.

PY - 2003/7

Y1 - 2003/7

N2 - We report an in situ transmission electron microscopy (TEM) study of nanocavity evolution in amorphous Si (a-Si) under ion beam irradiation. The size evolution of the nanocavities was monitored during ion irradiation with Si or As at various temperatures between 300 and 600 K. A linear decrease of the nanocavity diameter was found as the ion fluence increased; it was much faster than its counterpart in crystalline Si (c-Si). Here, the shrinkage rate depended on the irradiation-induced atomic displacement rate. No significant temperature dependence was observed, confirming that the irradiation-induced nanocavity shrinkage in a-Si is essentially due to ballistic interactions, i.e., differs radically from that in c-Si.

AB - We report an in situ transmission electron microscopy (TEM) study of nanocavity evolution in amorphous Si (a-Si) under ion beam irradiation. The size evolution of the nanocavities was monitored during ion irradiation with Si or As at various temperatures between 300 and 600 K. A linear decrease of the nanocavity diameter was found as the ion fluence increased; it was much faster than its counterpart in crystalline Si (c-Si). Here, the shrinkage rate depended on the irradiation-induced atomic displacement rate. No significant temperature dependence was observed, confirming that the irradiation-induced nanocavity shrinkage in a-Si is essentially due to ballistic interactions, i.e., differs radically from that in c-Si.

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EP - 40

JO - EPJ Applied Physics

JF - EPJ Applied Physics

IS - 1

ER -

In-situ microscopy study of nanocavity shrinkage in Si under on beam irradiation

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