InAs quantum dots grown on InGaAs buffer layers by metal-organic chemical vapor deposition

K. Sears; J. Wong-Leung; H. H. Tan; C. Jagadish

doi:10.1016/j.jcrysgro.2005.04.043

InAs quantum dots grown on InGaAs buffer layers by metal-organic chemical vapor deposition

K. Sears^*, J. Wong-Leung, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

InAs quantum dots were deposited onto GaAs or onto a thin (nominally 7 ML) InxGa1-xAs layer (x=0.075 or 0.15) by metal-organic chemical vapor deposition and compared using photoluminescence measurements, plan-view transmission electron microscopy (TEM) and atomic force microscopy (AFM). The photoluminescence intensity was considerably reduced for samples grown using an InGaAs buffer layer. This is correlated with the formation of dislocations (density=1.5(±1)×108cm-2) making them unsuitable for incorporation into devices requiring high optical efficiency.

Original language	English
Pages (from-to)	290-296
Number of pages	7
Journal	Journal of Crystal Growth
Volume	281
Issue number	2-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.04.043
Publication status	Published - 1 Aug 2005

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10.1016/j.jcrysgro.2005.04.043

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title = "InAs quantum dots grown on InGaAs buffer layers by metal-organic chemical vapor deposition",

abstract = "InAs quantum dots were deposited onto GaAs or onto a thin (nominally 7 ML) InxGa1-xAs layer (x=0.075 or 0.15) by metal-organic chemical vapor deposition and compared using photoluminescence measurements, plan-view transmission electron microscopy (TEM) and atomic force microscopy (AFM). The photoluminescence intensity was considerably reduced for samples grown using an InGaAs buffer layer. This is correlated with the formation of dislocations (density=1.5(±1)×108cm-2) making them unsuitable for incorporation into devices requiring high optical efficiency.",

keywords = "A1. Characterization, A1. Defects, A1. Nanostructures, A3. Metal-organic vapor phase epitaxy, B2. Semiconducting III-V materials",

author = "K. Sears and J. Wong-Leung and Tan, {H. H.} and C. Jagadish",

year = "2005",

month = aug,

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doi = "10.1016/j.jcrysgro.2005.04.043",

language = "English",

volume = "281",

pages = "290--296",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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T1 - InAs quantum dots grown on InGaAs buffer layers by metal-organic chemical vapor deposition

AU - Sears, K.

AU - Wong-Leung, J.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2005/8/1

Y1 - 2005/8/1

N2 - InAs quantum dots were deposited onto GaAs or onto a thin (nominally 7 ML) InxGa1-xAs layer (x=0.075 or 0.15) by metal-organic chemical vapor deposition and compared using photoluminescence measurements, plan-view transmission electron microscopy (TEM) and atomic force microscopy (AFM). The photoluminescence intensity was considerably reduced for samples grown using an InGaAs buffer layer. This is correlated with the formation of dislocations (density=1.5(±1)×108cm-2) making them unsuitable for incorporation into devices requiring high optical efficiency.

AB - InAs quantum dots were deposited onto GaAs or onto a thin (nominally 7 ML) InxGa1-xAs layer (x=0.075 or 0.15) by metal-organic chemical vapor deposition and compared using photoluminescence measurements, plan-view transmission electron microscopy (TEM) and atomic force microscopy (AFM). The photoluminescence intensity was considerably reduced for samples grown using an InGaAs buffer layer. This is correlated with the formation of dislocations (density=1.5(±1)×108cm-2) making them unsuitable for incorporation into devices requiring high optical efficiency.

KW - A1. Characterization

KW - A1. Defects

KW - A1. Nanostructures

KW - A3. Metal-organic vapor phase epitaxy

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=22144484886&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2005.04.043

DO - 10.1016/j.jcrysgro.2005.04.043

M3 - Article

SN - 0022-0248

VL - 281

SP - 290

EP - 296

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2-4

ER -

InAs quantum dots grown on InGaAs buffer layers by metal-organic chemical vapor deposition

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